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2SC2652

Toshiba

2SC2652 by Toshiba

2SC2652 by Toshiba is a NPN RF Power BJT with 13 dB min power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 300 W, a collector-emitter voltage of 55 V, and a transition frequency of 100 MHz.

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Nova Conductors

Japan . 500 parts In-Stock

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500

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VNN

France . 342 parts In-Stock

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Corohmni

South Africa . 31 parts In-Stock

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$1.544

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.817

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$1.817

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$1.817

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Ampacity Inc.

Singapore . 403 parts In-Stock

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$48.050

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403

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Discover the power and precision of the Toshiba 2SC2652 RF Power Bipolar Junction Transistor. With a reputation for excellence, Toshiba delivers top-notch performance in every product, including this NPN transistor designed for high frequency band applications. Amplify your projects with ease, thanks to the 13 dB minimum power gain and 300 W maximum power dissipation. Experience the quality and reliability you can trust, and unlock endless possibilities with the 2SC2652 from Toshiba.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed co-fired package body material provides excellent thermal conductivity and robust protection, ensuring reliable performance even in harsh environments.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification and signal processing, making this transistor suitable for various amplifier applications.

Minimum Power Gain (Gp): 13 dB

High minimum power gain ensures strong amplification capabilities, making this transistor ideal for boosting signals effectively.

Package Shape: ROUND

Round package shape enables easy and secure mounting in a variety of applications, providing versatility and convenience during installation.

Maximum Power Dissipation (Abs): 300 W

High maximum power dissipation allows for reliable operation at high power levels, making this transistor suitable for demanding power amplifier applications.

Maximum Collector-Emitter Voltage: 55 V

High maximum collector-emitter voltage rating provides a wide voltage margin for safe operation, ensuring protection against voltage spikes and overloads.

Maximum Collector Current (IC): 20 A

High maximum collector current rating allows for handling of large current loads, making this transistor suitable for high-power amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2652 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

300 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

13 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2652 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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