Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLX93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates up to 1200 MHz, and supports a max collector current of 1 A. Ideal for ultra-high frequency circuits, it ensures reliable performance in compact designs.
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$18.995
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$20.895
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$53.910
UNI Independent Distributors
The use of plastic/epoxy as the package material offers durability and resistance to environmental factors, making it suitable for reliable applications in various settings.
NPN transistors are known for their efficiency in amplifying signals, making this product a strong choice for various amplification tasks.
A single configuration ensures simplicity in design and integration, making it easier to utilize in circuit designs.
This transistor is specifically designed for amplification, making it ideal for applications requiring signal boosting.
A minimum power gain of 8.5 dB suggests strong amplification capabilities, ensuring efficient performance in audio and RF applications.
The round package shape allows for compact assembly and optimal thermal performance, beneficial in high-density circuit designs.
Flat terminals facilitate easier mounting and soldering, enhancing design flexibility and ensuring reliable connections.
Designed for ultra high frequency applications, this transistor can handle high-speed signals, making it suitable for advanced RF systems.
Having four terminals provides versatility in circuit design and functionality, allowing for various operational configurations.
The post/stud mount style delivers easy installation and effective heat dissipation, improving the reliability and longevity of the transistor.
A hFE of 10 ensures adequate current amplification, making this device practical for various electrical applications.
The high maximum operating temperature allows for use in extreme conditions without performance degradation, ensuring reliability in tough environments.
A maximum voltage rating of 33 V enhances the device's versatility, allowing it to be used in a wide range of voltage conditions.
Silicon is a well-known semiconductor material that provides excellent performance characteristics, making this transistor a reliable choice.
With a collector current capacity of 1 A, this transistor can efficiently handle substantial loads, making it suitable for power applications.
Radial terminal positions enhance solderability and allow for efficient space utilization on a circuit board.
An isolated case connection minimizes the risk of electrical interference, improving circuit reliability.
With a nominal transition frequency of 1200 MHz, this transistor is capable of functioning well in high-frequency applications, ideal for RF communication.
RF Power Bipolar Junction Transistors (BJT) BLX93A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BLX93A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-396-4703, 5961013964703, 5961-14-397-8770, 5961143978770, 5961-17-052-5805, 5961170525805, 5961-99-118-8716, 5961991188716, 5961-99-772-4398, 5961997724398
NIIN
013964703, 143978770, 170525805, 991188716, 997724398
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
SMBJ18CA
Secos
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
SS14
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
261
Deltrol Controls
Other Relays;
1554216002
Molex
WIRE AND CABLE;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N2222A
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
LM358M
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
LM317TG
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
LM317T
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Excel (Suzhou) Semiconductor
RXB06150W
NXP Semiconductors
RXB06150W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 540 MHz, and operates at temperatures up to 200 °C. Its ceramic, metal-sealed package ensures reliability in ultra-high frequency environments.
SD1448
STMicroelectronics
SD1448 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 31.8W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
LZ1418E100R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Terminal Position: DUAL;
AM83135-050
STMicroelectronics AM83135-050 is a NPN RF BJT transistor with 8A IC, 312W power dissipation, and S Band frequency. Ideal for switching applications in high-power circuits. Features ceramic-metal package, flat terminals, and flange mount style for efficient heat dissipation at up to 250 °C operating temperature.
935376627178
RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
2SC2395
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 5 A;
MSC82307
STMicroelectronics' MSC82307 is a NPN BJT transistor with 2 terminals, ideal for S Band applications. It has a max power dissipation of 21.4W, hFE of 30, and IC of 1.2A. The package style is flange mount with a ceramic-metal-sealed co-fired body material.
ISL73128RHF/PROTO
Renesas Electronics
RF Power Bipolar Transistors; JESD-609 Code: e4; Terminal Finish: GOLD;
BLX65E
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .7 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLW91
BLW91 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 30 W, operates up to 1 GHz, and supports a collector current of 1.5 A. Its robust ceramic-metal sealed package ensures reliability in ultra-high frequency environments.
SD8250
STMicroelectronics' SD8250 is a NPN RF BJT transistor with 575W power dissipation, ideal for L Band applications. Featuring single configuration, it has a max collector current of 20A and operates at up to 250 °C. Suitable for switching purposes, this transistor is surface mountable with a ceramic-metal package body.
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
BDP950E6327/SN
Infineon Technologies
RF Power Bipolar Transistors;
AM81214-030
STMicroelectronics AM81214-030 is an NPN BJT transistor with 7.2 dB min power gain, ideal for L Band applications. It has a max power dissipation of 63 W and can handle a collector current of 2.75 A, suitable for switching operations in high-frequency circuits. The package is ceramic-metal-sealed co-fired with a flange mount style, making it versatile for various RF power applications.
BDP950H6327TR
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
AM80912-030
STMicroelectronics AM80912-030 is an NPN BJT transistor with 7.8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75 W and can handle up to 3.5 A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal package and flat terminal form.
2005
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2;
PTB20170
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6.7 A; Terminal Form: FLAT; No. of Elements: 1;
ISL73128EHVX
PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;
SD1423
SD1423 by STMicroelectronics is an NPN RF Power BJT with 6 terminals and a max power dissipation of 29W. It operates in the ultra-high frequency band, suitable for amplifier applications. With a max collector-emitter voltage of 25V and max collector current of 2.5A, it offers high performance in a rectangular package style.
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BLX94A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Minimum Power Gain (Gp): 6 dB;
BLX94C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
BLX95
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): 3 A; JESD-30 Code: O-PRPM-F4;
BLX96
NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): POST/STUD MOUNT;
BLX97
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;
BLX98
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT;
BLX92A
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .7 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;
BLX93A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.3 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Base Capacitance: 10 pF;
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