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BLX93A

NXP Semiconductors

BLX93A by NXP Semiconductors

BLX93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates up to 1200 MHz, and supports a max collector current of 1 A. Ideal for ultra-high frequency circuits, it ensures reliable performance in compact designs.

Median Price

$59.900

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Mouser Electronics

USA . 1 parts In-Stock

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$59.900

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$49.010

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Digiode

USA . 1,986 parts In-Stock

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$56.905

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Vyrian

USA . 4,346 parts In-Stock

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Anansix

USA . 1,597 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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Native Components

USA . 811 parts In-Stock

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$18.995

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Northwest PG Solutions

USA . 1,216 parts In-Stock

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$20.895

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$18.805

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Corphita

USA . 4,528 parts In-Stock

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$53.910

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UNI Independent Distributors

Spain . 2,133 parts In-Stock

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Overview

Elevate your RF applications with the BLX93A from NXP Semiconductors, a trusted leader in innovation. This NPN RF Power BJT delivers outstanding performance in ultra-high frequency settings, ensuring crystal-clear signal amplification. With its robust design and superior quality, you can trust the BLX93A to enhance your projects while providing exceptional reliability and efficiency. Experience unparalleled value and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material offers durability and resistance to environmental factors, making it suitable for reliable applications in various settings.

Polarity or Channel Type: NPN

NPN transistors are known for their efficiency in amplifying signals, making this product a strong choice for various amplification tasks.

Configuration: SINGLE

A single configuration ensures simplicity in design and integration, making it easier to utilize in circuit designs.

Transistor Application: AMPLIFIER

This transistor is specifically designed for amplification, making it ideal for applications requiring signal boosting.

Minimum Power Gain (Gp): 8.5 dB

A minimum power gain of 8.5 dB suggests strong amplification capabilities, ensuring efficient performance in audio and RF applications.

Package Shape: ROUND

The round package shape allows for compact assembly and optimal thermal performance, beneficial in high-density circuit designs.

Terminal Form: FLAT

Flat terminals facilitate easier mounting and soldering, enhancing design flexibility and ensuring reliable connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency applications, this transistor can handle high-speed signals, making it suitable for advanced RF systems.

Number of Terminals: 4

Having four terminals provides versatility in circuit design and functionality, allowing for various operational configurations.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style delivers easy installation and effective heat dissipation, improving the reliability and longevity of the transistor.

Minimum DC Current Gain (hFE): 10

A hFE of 10 ensures adequate current amplification, making this device practical for various electrical applications.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows for use in extreme conditions without performance degradation, ensuring reliability in tough environments.

Maximum Collector-Emitter Voltage: 33 V

A maximum voltage rating of 33 V enhances the device's versatility, allowing it to be used in a wide range of voltage conditions.

Transistor Element Material: SILICON

Silicon is a well-known semiconductor material that provides excellent performance characteristics, making this transistor a reliable choice.

Maximum Collector Current (IC): 1 A

With a collector current capacity of 1 A, this transistor can efficiently handle substantial loads, making it suitable for power applications.

Terminal Position: RADIAL

Radial terminal positions enhance solderability and allow for efficient space utilization on a circuit board.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of electrical interference, improving circuit reliability.

Nominal Transition Frequency (fT): 1200 MHz

With a nominal transition frequency of 1200 MHz, this transistor is capable of functioning well in high-frequency applications, ideal for RF communication.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLX93A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

33 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

8.5 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLX93A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-396-4703, 5961013964703, 5961-14-397-8770, 5961143978770, 5961-17-052-5805, 5961170525805, 5961-99-118-8716, 5961991188716, 5961-99-772-4398, 5961997724398

NIIN

013964703, 143978770, 170525805, 991188716, 997724398

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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