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BLX94C

NXP Semiconductors

BLX94C by NXP Semiconductors

BLX94C by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates up to 750MHz, and supports a collector current of 2.5A. Ideal for ultra-high frequency circuits in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 4,960 parts In-Stock

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Anansix

USA . 1,634 parts In-Stock

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Vyrian

USA . 1,457 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Native Components

USA . 162 parts In-Stock

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$0.149

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$0.143

162

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$0.143

Northwest PG Solutions

USA . 1,408 parts In-Stock

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$0.164

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$0.145

1,408

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One Stop Electronics

USA . 420 parts In-Stock

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$54.050

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420

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Corphita

USA . 4,875 parts In-Stock

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4,875

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UNI Independent Distributors

Spain . 1,729 parts In-Stock

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Overview

Unlock exceptional performance with the BLX94C from NXP Semiconductors, a trusted leader in RF solutions. This high-quality RF Power BJT is engineered for superior amplification, delivering robust power and efficiency even in challenging environments. With its durable ceramic and metal-sealed package, it's perfect for demanding applications across communications and broadcasting. Experience enhanced reliability and optimal signal fidelity that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust packaging ensures high reliability and excellent thermal performance in demanding environments.

Polarity or Channel Type: NPN

NPN transistors are commonly utilized in RF applications, providing efficient signal amplification and performance.

Configuration: SINGLE

A single transistor configuration simplifies circuit design while maintaining effective amplification capabilities.

Transistor Application: AMPLIFIER

Specifically designed for amplification, this transistor is ideal for RF applications requiring high gain.

Minimum Power Gain (Gp): 6.5 dB

This minimum power gain level ensures sufficient signal amplification for various RF applications.

Package Shape: ROUND

The round package shape enables efficient space utilization and easy integration into RF circuit designs.

Terminal Form: FLAT

Flat terminals are designed for secure connections, ensuring stability in high-frequency operations.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra high frequency band, making it suitable for a wide range of RF applications.

No. of Terminals: 4

With four terminals, the design provides flexibility in circuit configurations and increases connection reliability.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style facilitates easy installation and enhances thermal dissipation in power applications.

Maximum Power Dissipation Ambient: 60 W

A high power dissipation rating allows this transistor to handle significant power levels without overheating.

Minimum DC Current Gain (hFE): 15

This minimum current gain ensures good performance in low-signal applications, making it versatile for various designs.

Maximum Operating Temperature: 200 °C

A high operating temperature allows this transistor to function reliably in extreme environments.

Maximum Collector-Emitter Voltage: 30 V

The sufficient voltage capability makes it suitable for many high-voltage applications in RF systems.

Transistor Element Material: SILICON

Silicon is a standard material for transistors, providing reliable performance and well-established manufacturing processes.

Maximum Collector Current (IC): 2.5 A

This current capacity enables robust performance in high-power RF applications without risk of damage.

Terminal Position: RADIAL

Radial terminal positioning aids in efficient layout and connectivity in dense circuit designs.

Case Connection: ISOLATED

An isolated case connection enhances safety and reduces the risk of unwanted feedback in sensitive applications.

Nominal Transition Frequency (fT): 750 MHz

A high transition frequency indicates suitability for high-speed applications, enhancing overall signal fidelity.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLX94C attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

60 W

Minimum Power Gain (Gp):

6.5 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLX94C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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