Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLX95 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 4.5 dB, operates at frequencies up to 900 MHz, and supports a max collector current of 3 A. Ideal for ultra-high frequency circuits, it ensures reliable performance in compact designs.
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$0.535
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$0.589
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$22.050
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Corphita
Assy Fe
The durable plastic/epoxy body material offers excellent protection against environmental factors, ensuring reliability in various applications.
NPN configuration is widely used in amplification and switching applications, making this transistor versatile for many circuit designs.
A single configuration simplifies circuit design and integration, making it easier for engineers to implement in various systems.
Designed specifically for amplification, this transistor provides high performance in audio and RF applications.
A minimum power gain of 4.5 dB ensures effective signal amplification, making it suitable for enhancing weak signals in communication systems.
The round package shape aids in heat dissipation, enhancing the thermal management of the device during operation.
Flat terminal design facilitates easy mounting and soldering, improving the overall reliability of connections in circuit boards.
Being optimized for ultra-high frequency operations, this transistor is ideal for high-speed communication applications like RF transmitters.
Having four terminals provides flexibility in circuit design and supports various configuration setups.
The post/stud mount style supports secure installation, making it suitable for applications that require robustness.
A minimum hFE of 25 indicates a competent performance level in current amplification, ensuring efficient operation in amplifier circuits.
With a high maximum operating temperature, this transistor is well-suited for applications in high-heat environments, ensuring longevity.
Low collector-base capacitance helps reduce signal distortion, essential for high-frequency applications.
The maximum collector-emitter voltage of 30 V allows for versatility in various power applications without risk of breakdown.
Silicon is known for its excellent semiconductor properties, ensuring reliability and efficiency in a wide range of applications.
A maximum collector current of 3 A allows the transistor to handle significant loads, making it suitable for robust applications.
Radial terminal positioning aids in compact PCB designs, optimizing space usage while maintaining functionality.
Isolated case connections enhance safety and performance by preventing unwanted interaction between the transistor’s terminals.
A high nominal transition frequency of 900 MHz indicates the transistor's ability to operate efficiently at high speeds, essential for RF applications.
RF Power Bipolar Junction Transistors (BJT) BLX95 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BLX95 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-14-468-9879, 5961144689879, 5961-13-113-0343, 5961131130343
NIIN
144689879, 131130343
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
LM317T
Bay Linear
Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;
SMBJ18CA
Zowie Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883
Texas Instruments
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
Vishay Telefunken
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
MMBF170LT1G
Onsemi
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
1N4148WS
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taitron Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Semtech Electronics
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Gulf Semiconductor
BSS138LT1G
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
2N2222A
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
2N5946
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 37 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): POST/STUD MOUNT;
AM1011-070
STMicroelectronics' AM1011-070 is an NPN RF BJT with a single configuration for switching applications. It offers a min power gain of 6.7 dB, can handle up to 8A collector current, and operates in L Band frequencies. The transistor comes in a ceramic-metal-sealed co-fired package with flange mount style, suitable for high-power dissipation up to 200W at temperatures up to 250 °C.
2010
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Additional Features: HIGH RELIABILITY;
933582620112
NXP Semiconductors
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 8;
BDP954-E6327
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
BLX68
BLX68 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 5.4 dB, operates at ultra-high frequencies, and withstands temperatures up to 150 °C. Its flat, round package ensures efficient performance in compact designs.
SD1540-08
SD1540-08 by STMicroelectronics is a NPN RF BJT transistor with 22A IC, 875W Pd, and L Band frequency. Ideal for switching applications in high-power circuits due to its ceramic-metal package and flat terminals. Suitable for use in flange mount configurations at temperatures up to 200 °C.
BLX67
BLX67 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and withstands temperatures up to 150 °C. Its compact round package ensures efficient performance in various electronic devices.
2N3632
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 3 A;
SD1439
SD1439 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 8.75W, hFE of 15, and VCE of 24V. Ideal for high-frequency amplification due to its silicon element material and radial terminal position.
BLV193
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.5 A; JESD-30 Code: R-CDFM-F6;
MAX2601ESA+
Maxim Integrated
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;
2N6080
New Jersey Semiconductor Products
NPN; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;
MRF9100LSR3
RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
2N5643
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A;
SD1534-08
STMicroelectronics' SD1534-08 is an NPN BJT transistor for switching applications in L Band. With a max IC of 5.5A and Pmax of 219W, it operates up to 200 °C. This ceramic-metal sealed co-fired package has dual terminals and flat shape for surface mounting.
BLV2347
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
LTE4002S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .09 A; Maximum Collector-Emitter Voltage: 16 V;
MZ0912B250Y
RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2; No. of Elements: 1;
MRF492A
Motorola
MRF492A by Motorola is a NPN RF BJT with 11 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 250 W and max collector current of 20 A, it operates up to 150°C. Featuring a ceramic-metal package, it has a transition frequency of 50 MHz and collector-emitter voltage of 18 V.
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BLX93A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): POST/STUD MOUNT;
BLX94A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Minimum Power Gain (Gp): 6 dB;
BLX94C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
BLX96
NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): POST/STUD MOUNT;
BLX97
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;
BLX98
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT;
BLX92A
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .7 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.3 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Base Capacitance: 10 pF;
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