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BLX94A

NXP Semiconductors

BLX94A by NXP Semiconductors

BLX94A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates up to 750 MHz, and withstands temperatures up to 200 °C. Ideal for ultra-high frequency circuits in various electronic devices.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 2,479 parts In-Stock

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Anansix

USA . 695 parts In-Stock

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695

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Digiode

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353

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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Halfin

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One Stop Electronics

USA . 774 parts In-Stock

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$12.050

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Corphita

USA . 2,549 parts In-Stock

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UNI Independent Distributors

Spain . 1,981 parts In-Stock

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Northwest PG Solutions

USA . 1,709 parts In-Stock

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Native Components

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Overview

Experience the exceptional performance of the BLX94A from NXP Semiconductors, a leader in innovation. This RF Power BJT combines reliability and efficiency, making it perfect for high-frequency amplifier applications. Crafted with precision and quality, the BLX94A ensures optimal power gain and superior thermal management, empowering your designs with robust capabilities. Choose NXP for unmatched value and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic and epoxy materials ensures durability and resistance to environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it provides better performance in amplification and switching applications, making it versatile for a wide range of electronic designs.

Configuration: SINGLE

The single configuration provides a straightforward design, facilitating easy integration into circuits with minimal complexity.

Transistor Application: AMPLIFIER

Optimized for use as an amplifier, this transistor can enhance signal strength, making it ideal for audio and RF applications.

Minimum Power Gain (Gp): 6 dB

A minimum power gain of 6 dB ensures that this transistor can effectively boost signal strength, essential for high-performance amplification.

Package Shape: ROUND

The round package shape is not only space-efficient but also aids in improved thermal management, crucial for high-frequency applications.

Terminal Form: FLAT

The flat terminal form allows for easy and reliable mounting in a variety of circuit configurations, enhancing assembly convenience.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, this transistor can be used in advanced communication systems, ensuring reliable performance in RF circuits.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in circuit design, allowing for more precise connections and functionality.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style provides stable mechanical support, ideal for applications requiring robust physical mounting solutions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable current amplification, making this BJT suitable for low-power signal amplification.

Maximum Operating Temperature: 200 °C

Capable of operating at temperatures up to 200 °C, this transistor is well-suited for high-temperature environments, ensuring longevity and reliability.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30 V, this BJT is capable of handling a wide range of circuit voltages safely and effectively.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal stability and performance characteristics, making it a tried-and-true choice in semiconductor technology.

Maximum Collector Current (IC): 2.5 A

A maximum collector current of 2.5 A allows this transistor to handle substantial load currents, making it suitable for power amplification applications.

Terminal Position: RADIAL

Radial terminal positioning optimizes space usage on PCBs, providing designers with flexibility in layout and component placement.

Case Connection: ISOLATED

Isolated case connection enhances device safety and reliability, preventing any unintended current paths that could lead to circuit failure.

Nominal Transition Frequency (fT): 750 MHz

A nominal transition frequency of 750 MHz allows for effective operation in high-speed applications, making this transistor suitable for modern communication systems.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLX94A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

6 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLX94A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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