Loading...

LFE18500X

NXP Semiconductors

LFE18500X by NXP Semiconductors

LFE18500X by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 120W, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band frequency use in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,983

-

-

-

-

Vyrian

USA . 4,572 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,572

-

-

-

-

Anansix

USA . 2,004 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,004

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 490 parts In-Stock

1+ parts

$60.050

100+ parts

-

1k+ parts

-

10k+ parts

-

490

$60.050

-

-

-

Corphita

USA . 4,679 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,679

-

-

-

-

UNI Independent Distributors

Spain . 1,406 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,406

-

-

-

-

Overview

Unlock superior performance with the LFE18500X from NXP Semiconductors, a top-tier choice in RF Power BJTs. Engineered for exceptional reliability and efficiency, this NPN transistor excels in amplifier applications, delivering robust power gain and thermal stability. Ideal for automotive, telecommunications, and industrial sectors, its ceramic-metal sealed design ensures durability. Choose LFE18500X for unmatched quality and elevate your projects with trusted innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed co-fired package provides excellent thermal stability and reliability, making it suitable for high-performance applications.

Polarity or Channel Type: NPN

NPN configuration is ideal for amplification applications, ensuring efficient signal processing and ease of integration into various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and keeps costs low while delivering robust performance.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this BJT can effectively boost signal strengths, making it an essential component in audio and radio frequency circuits.

Surface Mount: YES

Surface mount capability allows for compact design and ease of integration into a variety of modern electronic devices.

Minimum Power Gain (Gp): 7 dB

A minimum power gain of 7 dB ensures that the transistor is capable of amplifying signals adequately for practical applications.

Package Shape: RECTANGULAR

The rectangular package shape enhances compatibility with existing PCB layouts, facilitating easier mounting and integration.

Terminal Form: FLAT

Flat terminals ensure a good surface contact and reliable connections, reducing the risk of faulty solder joints and improving overall performance.

Highest Frequency Band: L BAND

Operating in the L band supports various communication technologies, making it suitable for a wide range of RF applications.

No. of Terminals: 2

Having only 2 terminals reduces complexity in circuit design, making it straightforward to use in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides enhanced stability and thermal dissipation, making it effective for high-power applications.

Maximum Power Dissipation Ambient: 120 W

A high maximum power dissipation rating allows the transistor to operate reliably even under heavy load conditions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures efficient current amplification, making this transistor effective for various signal processing tasks.

Maximum Operating Temperature: 200 °C

The ability to operate at temperatures up to 200 °C means that this transistor can be used in extreme environments without degradation of performance.

Maximum Collector-Emitter Voltage: 22 V

A collector-emitter voltage rating of 22V ensures robustness in handling high-voltage applications, offering reliable performance in demanding scenarios.

Transistor Element Material: SILICON

Silicon as the element material contributes to reliable performance and is widely used in the industry for its effective semiconductor properties.

Maximum Collector Current (IC): 12 A

A maximum collector current rating of 12A makes this transistor suitable for high current applications, ensuring it can handle significant load.

Terminal Position: DUAL

Dual terminal positioning allows for flexible circuit design and layout options, enhancing the ease of integration into various systems.

Case Connection: EMITTER

Emitter case connection helps in effective thermal management and enhances overall transistor performance in amplification applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) LFE18500X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

22 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

120 W

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LFE18500X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3