Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LFE18500X by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 120W, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band frequency use in compact designs.
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The ceramic, metal-sealed co-fired package provides excellent thermal stability and reliability, making it suitable for high-performance applications.
NPN configuration is ideal for amplification applications, ensuring efficient signal processing and ease of integration into various electronic circuits.
Single configuration simplifies circuit design and keeps costs low while delivering robust performance.
Designed for amplifier applications, this BJT can effectively boost signal strengths, making it an essential component in audio and radio frequency circuits.
Surface mount capability allows for compact design and ease of integration into a variety of modern electronic devices.
A minimum power gain of 7 dB ensures that the transistor is capable of amplifying signals adequately for practical applications.
The rectangular package shape enhances compatibility with existing PCB layouts, facilitating easier mounting and integration.
Flat terminals ensure a good surface contact and reliable connections, reducing the risk of faulty solder joints and improving overall performance.
Operating in the L band supports various communication technologies, making it suitable for a wide range of RF applications.
Having only 2 terminals reduces complexity in circuit design, making it straightforward to use in various applications.
Flange mount style provides enhanced stability and thermal dissipation, making it effective for high-power applications.
A high maximum power dissipation rating allows the transistor to operate reliably even under heavy load conditions.
A minimum DC current gain of 15 ensures efficient current amplification, making this transistor effective for various signal processing tasks.
The ability to operate at temperatures up to 200 °C means that this transistor can be used in extreme environments without degradation of performance.
A collector-emitter voltage rating of 22V ensures robustness in handling high-voltage applications, offering reliable performance in demanding scenarios.
Silicon as the element material contributes to reliable performance and is widely used in the industry for its effective semiconductor properties.
A maximum collector current rating of 12A makes this transistor suitable for high current applications, ensuring it can handle significant load.
Dual terminal positioning allows for flexible circuit design and layout options, enhancing the ease of integration into various systems.
Emitter case connection helps in effective thermal management and enhances overall transistor performance in amplification applications.
RF Power Bipolar Junction Transistors (BJT) LFE18500X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
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Transistor Application:
Transistor Element Material:
LFE18500X Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
MSC1004M
MSC1004M by STMicroelectronics is a NPN RF Power BJT with 18W power dissipation, suitable for amplifier applications in L Band frequencies. Featuring a single configuration, it has a max collector current of 0.65A and operates at temperatures up to 200 °C.
NESG270034-T1-AZ
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .75 A; Terminal Position: SINGLE;
BLV92
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
MMRF5015NR5
RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
2N3866A
Microchip Technology
2N3866A by Microchip Technology is an NPN RF BJT with a VCEsat of 1V, Gp of 10dB, and hFE of 25. It is used as an amplifier in the UHF band due to its high fT of 800MHz. The transistor has a max VCE of 30V and IC of 0.4A, making it suitable for high-frequency applications.
AM81720-012
STMicroelectronics' AM81720-012 is an NPN RF BJT with 7.4 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 31.8W, operating up to 200 °C, and a DC current gain of at least 15 hFE.
2N3375
2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.
BDP954
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;
MX0912B100Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 20 V;
SP000748378
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;
2SC2782
Toshiba
The Toshiba 2SC2782 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 6.4 dB, max power dissipation of 220 W, and operates in the very high frequency band. This transistor has a max collector-emitter voltage of 16 V and can handle a max collector current of 20 A.
RV3135B5X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 1 A; No. of Terminals: 2;
SD1731(TH562)
SD1731(TH562) by STMicroelectronics is a high-performance NPN RF power BJT designed for very high frequency applications. It features a max power dissipation of 233 W, operates up to 150 °C, and supports collector currents of 20 A. Ideal for demanding RF amplification tasks in compact designs.
2SA1537D
Onsemi
Onsemi's 2SA1537D is a PNP RF BJT with max. Vce of 70V and Ic of 0.5A, ideal for switching applications at 700MHz. It features a plastic/epoxy body, single configuration, and through-hole terminals in a rectangular package style.
MZ0912B50Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS; Package Style (Meter): FLANGE MOUNT;
2SC2879
Toshiba's 2SC2879 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 13 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 100 MHz. Ideal for surface mount setups, it has a max collector current of 25 A and can handle temperatures up to 175°C.
AM80814-025
STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.
MRF422
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
SD1728
SD1728 by STMicroelectronics is a NPN RF BJT transistor with 55V VCEO, 40A IC, and 330W Ptot. Ideal for high-frequency amplifier applications due to its single configuration and flat terminal form. Suitable for surface mount with a round package shape and radial terminal position.
KSC5034
Samsung
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A;
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LFE15600X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT;
LFE15600XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Additional Features: WITH EMITTER BALLASTING RESISTORS; Case Connection: EMITTER;
LFE18500XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Additional Features: WITH EMITTER BALLASTING RESISTORS;
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