Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics AM81416-020 is a NPN BJT transistor with 2.8A IC, 50W Pd, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package and operates up to 200 °C. Suitable for surface mount with dual terminals in a rectangular shape.
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Ceramic and metal-sealed cofired package body material provides excellent heat dissipation and protection, ensuring reliable performance even in high temperature environments.
NPN type transistors are commonly used for amplification purposes due to their high input impedance and low output impedance, making them suitable for various amplifier applications.
Single configuration transistors are easy to use and integrate into circuits, making them a preferred choice for simple amplifier designs.
Specifically designed for amplifier applications, ensuring optimized performance and efficiency in amplification tasks.
Surface mount capability allows for easy and space-saving installation on circuit boards, making it suitable for compact electronic devices.
Rectangular package shape provides a standardized form factor for easy integration and mounting in electronic systems.
Flat terminal form ensures secure and reliable connections, reducing the risk of signal loss or interference in amplifier circuits.
Designed for operation in the L Band frequency range, suitable for a wide range of radio frequency applications.
Simple two-terminal design for easy connectivity and integration into amplifier circuits.
High power dissipation capability allows for efficient operation even at high power levels, ensuring reliable performance under demanding conditions.
Flange mount package style provides secure mechanical mounting and easy installation in electronic systems.
Minimum DC current gain of 15 ensures stable and consistent amplification performance in amplifier circuits.
High maximum operating temperature of 200 °C allows for reliable performance in high-temperature environments or applications.
Silicon transistor element material ensures high efficiency and reliability in amplification tasks, making it a suitable choice for amplifier applications.
High maximum collector current of 2.8A allows for efficient power handling and performance in amplifier circuits.
Dual terminal position provides flexibility in circuit design and connectivity options for amplifier applications.
RF Power Bipolar Junction Transistors (BJT) AM81416-020 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
AM81416-020 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
1N4148
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Comset Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
LM358M
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Renesas Electronics
ROHM
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
Bharat Electronics
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
4554
Jw Miller Magnetics
Other Semiconductors;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
2N3632
Texas Instruments
2N3632 by Texas Instruments is an NPN RF Power BJT with a max power dissipation of 23W and max collector current of 3A. It operates in the very high frequency band at up to 175MHz, making it suitable for applications requiring high power amplification in RF circuits. The transistor's ceramic-metal-sealed co-fired package ensures reliable performance even at temperatures up to 200°C.
2SC2319
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2900 MHz; Maximum Collector Current (IC): .35 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MAX2602ESA-T
Maxim Integrated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;
BLW60C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;
PTB20264
Infineon Technologies
NPN; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 22 V; Transistor Application: AMPLIFIER;
MX0912B350Y
MX0912B350Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.
5962F0721805VXC
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum DC Current Gain (hFE): 40;
BLV13
BLV13 by NXP Semiconductors is an NPN RF power BJT designed for amplifiers, featuring a min power gain of 8.5 dB and a nominal transition frequency of 1650 MHz. It operates at max temperatures of 200 °C with a collector current up to 8 A. Its robust ceramic-metal sealed package ensures reliability in very high-frequency applications.
AM0608-200
STMicroelectronics
STMicroelectronics' AM0608-200 is an NPN RF BJT with 8.7 dB min power gain, ideal for amplifier applications in the ultra-high frequency band. With a max power dissipation of 875 W and operating temperature up to 250 °C, it features a ceramic-metal-sealed co-fired package body and dual terminal position for efficient performance.
BLV20
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .9 A;
PTB20046
NPN; Surface Mount: YES; Maximum Collector Current (IC): .7 A; Highest Frequency Band: L BAND; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F6;
SD1728E
SD1728E by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications, it features a plastic/epoxy package, flat terminals, and operates up to 200 °C. Suitable for surface mount with flange mount style packaging.
BDP954-E6433
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
BLS3135-20TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BLU20/12
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 6; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLT92/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; JESD-30 Code: O-CRDB-F4; Transistor Application: AMPLIFIER;
MRF658
Motorola
MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.
BLV92
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
LWE2015RTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; JESD-30 Code: O-CRDB-F2; Qualification: Not Qualified;
BLW898
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
AM81214-006
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Minimum DC Current Gain (hFE): 15;
AM81214-015
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A; Package Style (Meter): FLANGE MOUNT;
AM81214-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 15;
AM81214-060
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 5 A; Case Connection: BASE;
AM81214-6
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;
AM81719-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 2.67 A; Package Shape: SQUARE;
AM81719-040
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79.5 W; Maximum Collector Current (IC): 4.8 A; No. of Elements: 1;
AM81720-012
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.8 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.75 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;
AM81214-300
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 18.75 A; JESD-30 Code: R-CDFM-F2;
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