Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
STMicroelectronics AM81416-020 is a NPN BJT transistor with 2.8A IC, 50W Pd, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package and operates up to 200 °C. Suitable for surface mount with dual terminals in a rectangular shape.
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Ceramic and metal-sealed cofired package body material provides excellent heat dissipation and protection, ensuring reliable performance even in high temperature environments.
NPN type transistors are commonly used for amplification purposes due to their high input impedance and low output impedance, making them suitable for various amplifier applications.
Single configuration transistors are easy to use and integrate into circuits, making them a preferred choice for simple amplifier designs.
Specifically designed for amplifier applications, ensuring optimized performance and efficiency in amplification tasks.
Surface mount capability allows for easy and space-saving installation on circuit boards, making it suitable for compact electronic devices.
Rectangular package shape provides a standardized form factor for easy integration and mounting in electronic systems.
Flat terminal form ensures secure and reliable connections, reducing the risk of signal loss or interference in amplifier circuits.
Designed for operation in the L Band frequency range, suitable for a wide range of radio frequency applications.
Simple two-terminal design for easy connectivity and integration into amplifier circuits.
High power dissipation capability allows for efficient operation even at high power levels, ensuring reliable performance under demanding conditions.
Flange mount package style provides secure mechanical mounting and easy installation in electronic systems.
Minimum DC current gain of 15 ensures stable and consistent amplification performance in amplifier circuits.
High maximum operating temperature of 200 °C allows for reliable performance in high-temperature environments or applications.
Silicon transistor element material ensures high efficiency and reliability in amplification tasks, making it a suitable choice for amplifier applications.
High maximum collector current of 2.8A allows for efficient power handling and performance in amplifier circuits.
Dual terminal position provides flexibility in circuit design and connectivity options for amplifier applications.
RF Power Bipolar Junction Transistors (BJT) AM81416-020 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
AM81416-020 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Mde Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitronic Enterprise
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
Rectron
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
2N2222A
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
Frontier Electronics
Continental Device India
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
BLV862
NXP Semiconductors
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 25 A; Maximum Power Dissipation Ambient: 350 W;
2SC5336-T1
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
RZ3135B50W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 5.7 A; Package Shape: RECTANGULAR;
MRF6409
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; No. of Terminals: 6;
BLW96
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 340 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-CRFM-F4;
PTB20216
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Application: AMPLIFIER;
MSC81111
STMicroelectronics
STMicroelectronics' MSC81111 is a NPN RF BJT with 18.8W power dissipation, suitable for L Band applications like amplifiers. Featuring a max collector current of 0.6A and operating temperature up to 200 °C, it has a ceramic-metal-sealed co-fired package body ideal for flange mount installations.
BLV21
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 1.75 A;
2N3866
Microchip Technology
2N3866 by Microchip Technology is a NPN RF BJT with 1V VCEsat, 10dB Gp, and 800MHz fT. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its 30V VCEO and 0.4A IC capabilities. The transistor's SILICON material and 3-terminal CYLINDRICAL package make it suitable for high-frequency amplification needs.
BLV910
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
RX2731B90W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 185 W; Maximum Collector Current (IC): 8.5 A; No. of Elements: 1;
SD8250
STMicroelectronics' SD8250 is a NPN RF BJT transistor with 575W power dissipation, ideal for L Band applications. Featuring single configuration, it has a max collector current of 20A and operates at up to 250 °C. Suitable for switching purposes, this transistor is surface mountable with a ceramic-metal package body.
MRFX035HR5
RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AM0608-450
STMicroelectronics' AM0608-450 is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 6.9 dB, max power dissipation of 1500 W, and operates in the ultra-high frequency band. The transistor has a max collector current of 32 A and can withstand temperatures up to 250 °C.
SD1015
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
2SC2782
Toshiba
The Toshiba 2SC2782 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 6.4 dB, max power dissipation of 220 W, and operates in the very high frequency band. This transistor has a max collector-emitter voltage of 16 V and can handle a max collector current of 20 A.
SD1733
SD1733 by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 3.25A IC, and 127W Ptot. Ideal for amplifier applications in the VHF band due to its high frequency capabilities and silicon element material. Package style is post/stud mount with 4 terminals in a round shape.
LAE4002S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .09 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR; JESD-30 Code: S-CQMW-F4;
SD1448
SD1448 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 31.8W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
BFT98B
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): .2 A;
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AM81214-006
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Minimum DC Current Gain (hFE): 15;
AM81214-015
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A; Package Style (Meter): FLANGE MOUNT;
AM81214-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 15;
AM81214-060
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 5 A; Case Connection: BASE;
AM81214-6
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;
AM81719-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 2.67 A; Package Shape: SQUARE;
AM81719-040
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79.5 W; Maximum Collector Current (IC): 4.8 A; No. of Elements: 1;
AM81720-012
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.8 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.75 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;
AM81214-300
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 18.75 A; JESD-30 Code: R-CDFM-F2;
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