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AM81416-020

STMicroelectronics

AM81416-020 by STMicroelectronics

STMicroelectronics AM81416-020 is a NPN BJT transistor with 2.8A IC, 50W Pd, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package and operates up to 200 °C. Suitable for surface mount with dual terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,092 parts In-Stock

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4,092

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Vyrian

USA . 2,452 parts In-Stock

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2,452

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Anansix

USA . 1,955 parts In-Stock

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1,955

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,473 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

$0.302

10k+ parts

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1,473

$0.336

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$0.302

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MKK Technologies

India . 1,302 parts In-Stock

1+ parts

$0.631

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1,302

$0.631

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DigiPath Technology Company

USA . 1,302 parts In-Stock

1+ parts

$0.631

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-

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1,302

$0.631

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Native Components

USA . 207 parts In-Stock

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$1.534

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207

$1.534

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Northwest PG Solutions

USA . 2,155 parts In-Stock

1+ parts

$1.687

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2,155

$1.687

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Corphita

USA . 1,604 parts In-Stock

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1,604

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Parana Technologies

USA . 619 parts In-Stock

1+ parts

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$0.402

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619

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$0.402

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Overview

Discover the unparalleled performance and reliability of the AM81416-020 RF Power Bipolar Junction Transistor from STMicroelectronics. Known for their cutting-edge technology and innovative solutions, STMicroelectronics delivers top-notch quality products that exceed industry standards. Ideal for amplifier applications in the L Band frequency, this transistor offers a maximum power dissipation of 50W and a maximum collector current of 2.8A. Experience superior functionality and unmatched value with the AM81416-020, setting new standards in RF power transistors.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides excellent heat dissipation and protection, ensuring reliable performance even in high temperature environments.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification purposes due to their high input impedance and low output impedance, making them suitable for various amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them a preferred choice for simple amplifier designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimized performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and space-saving installation on circuit boards, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy integration and mounting in electronic systems.

Terminal Form: FLAT

Flat terminal form ensures secure and reliable connections, reducing the risk of signal loss or interference in amplifier circuits.

Highest Frequency Band: L BAND

Designed for operation in the L Band frequency range, suitable for a wide range of radio frequency applications.

No. of Terminals: 2

Simple two-terminal design for easy connectivity and integration into amplifier circuits.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability allows for efficient operation even at high power levels, ensuring reliable performance under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mechanical mounting and easy installation in electronic systems.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures stable and consistent amplification performance in amplifier circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows for reliable performance in high-temperature environments or applications.

Transistor Element Material: SILICON

Silicon transistor element material ensures high efficiency and reliability in amplification tasks, making it a suitable choice for amplifier applications.

Maximum Collector Current (IC): 2.8 A

High maximum collector current of 2.8A allows for efficient power handling and performance in amplifier circuits.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connectivity options for amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81416-020 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM81416-020 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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