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AM81214-060

STMicroelectronics

AM81214-060 by STMicroelectronics

STMicroelectronics' AM81214-060 is a NPN RF BJT transistor with 6.6 dB power gain, ideal for L Band applications. It has a max power dissipation of 107W, operating up to 250 °C. The transistor features a flange mount package and is suitable for switching purposes in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,110 parts In-Stock

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3,110

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Anansix

USA . 2,733 parts In-Stock

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2,733

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Vyrian

USA . 169 parts In-Stock

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169

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Distributors (Availability)

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Native Components

USA . 1 parts In-Stock

1+ parts

$0.406

100+ parts

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$0.390

1

$0.406

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$0.390

Northwest PG Solutions

USA . 1,281 parts In-Stock

1+ parts

$0.447

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$0.394

1,281

$0.447

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$0.394

IDEA Electronic Components Group

UK . 2,257 parts In-Stock

1+ parts

$0.920

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$0.828

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2,257

$0.920

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$0.828

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MKK Technologies

India . 743 parts In-Stock

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$1.730

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743

$1.730

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DigiPath Technology Company

USA . 743 parts In-Stock

1+ parts

$1.730

100+ parts

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743

$1.730

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Corphita

USA . 4,243 parts In-Stock

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4,243

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Parana Technologies

USA . 397 parts In-Stock

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$1.100

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397

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$1.100

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Overview

Elevate your RF power applications with the AM81214-060 from STMicroelectronics, a leading manufacturer known for its top-quality components. This NPN transistor offers reliable switching capabilities and a minimum power gain of 6.6 dB, making it ideal for L band frequencies. With a maximum power dissipation of 107 W and a maximum collector current of 5 A, this transistor delivers exceptional performance in a compact rectangular package. Trust STMicroelectronics to provide you with cutting-edge technology that enhances your projects with efficiency and precision. Experience the difference today with the AM81214-060.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making this product suitable for harsh environments.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into existing circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and layout.

Transistor Application: SWITCHING

Designed for switching applications, making it ideal for power control and signal amplification.

Surface Mount: YES

Surface mount option enables easy assembly and saves space on the PCB.

Minimum Power Gain (Gp): 6.6 dB

Decent power gain ensures efficient signal amplification.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and secure mounting.

Terminal Form: FLAT

Flat terminals provide stable connections and easy soldering.

Highest Frequency Band: L BAND

Suited for applications in the L band frequency range.

Maximum Power Dissipation (Abs): 107 W

High power dissipation capability ensures reliability under high power conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates easy installation and secure attachment.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain ensures stable and consistent performance.

Maximum Operating Temperature: 250 °C

Withstands high temperature environments, increasing overall reliability.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics and reliability.

Maximum Collector Current (IC): 5 A

High maximum collector current allows for handling higher power loads.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections.

Case Connection: BASE

Base case connection ensures stable grounding and heat dissipation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81214-060 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.6 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM81214-060 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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