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BLV95

NXP Semiconductors

BLV95 by NXP Semiconductors

BLV95 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 5.5 dB, operates at ultra-high frequencies, and supports a max collector current of 5 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,813 parts In-Stock

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Digiode

USA . 1,251 parts In-Stock

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Vyrian

USA . 47 parts In-Stock

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47

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Ashlea Components Ltd

UK . 9 parts In-Stock

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One Stop Electronics

USA . 424 parts In-Stock

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$46.050

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424

$46.050

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Native Components

USA . 868 parts In-Stock

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$131.460

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$126.202

868

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$126.202

Northwest PG Solutions

USA . 1,653 parts In-Stock

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$144.606

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$144.606

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UNI Independent Distributors

Spain . 2,088 parts In-Stock

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Corphita

USA . 1,763 parts In-Stock

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Kepictronics

USA . 421 parts In-Stock

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Overview

Unlock unparalleled performance with the BLV95 from NXP Semiconductors, a premier choice for RF power amplification. Crafted with precision in a robust ceramic and metal-sealed package, this NPN transistor excels in ultra-high frequency applications, providing exceptional power gain and reliability. NXP's commitment to quality ensures that the BLV95 not only meets but exceeds industry standards, delivering unmatched value and efficiency for your designs. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable package material provides enhanced thermal stability and reliability, making it suitable for demanding applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in amplification and switching applications, offering better performance for various circuits.

Configuration: SINGLE

The single configuration simplifies design and integration, making it an efficient choice for many applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can effectively boost signal strength, making it ideal for audio and RF applications.

Surface Mount: YES

The surface mount capability allows for compact designs and easy assembly, enhancing the versatility of this component.

Minimum Power Gain (Gp): 5.5 dB

A minimum power gain of 5.5 dB ensures that the transistor can effectively amplify signals, making it suitable for high-performance applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, facilitating efficient layout and design.

Terminal Form: FLAT

Flat terminals ensure good contact and soldering performance, improving reliability in electronic assemblies.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high-frequency applications, this transistor excels in RF communication, radar, and advanced signaling.

No. of Terminals: 6

Having 6 terminals provides versatility in connection options, enabling complex circuit designs without compromising simplicity.

Package Style (Meter): FLANGE MOUNT

The flange mount design secures the transistor firmly, ensuring stability in high-vibration environments.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 indicates good current amplification capabilities, essential for efficient amplifier designs.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows this transistor to perform reliably in extreme conditions, enhancing its applicability.

Maximum Collector-Emitter Voltage: 16 V

With a collector-emitter voltage of 16 V, this transistor can handle a variety of applications with varying voltage requirements.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical characteristics and thermal conductivity, ensuring reliable performance.

Maximum Collector Current (IC): 5 A

A maximum collector current of 5 A provides ample capacity for high-power applications, making this transistor suitable for robust designs.

Terminal Position: DUAL

The dual terminal position facilitates better layout options, simplifying circuit design and integration.

Case Connection: ISOLATED

An isolated case connection enhances safety and performance by reducing the risk of accidental short circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV95 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

5.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV95 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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