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SD1680

STMicroelectronics

SD1680 by STMicroelectronics

SD1680 by STMicroelectronics is an NPN RF BJT with 2 elements, suitable for amplifier applications in the UHF band. It has a max power dissipation of 310W, hFE of 15, and operates up to 200 °C. The transistor features a common emitter configuration in a rectangular package with flange mount style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,716 parts In-Stock

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3,716

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Digiode

USA . 3,167 parts In-Stock

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3,167

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Anansix

USA . 1,792 parts In-Stock

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1,792

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 392 parts In-Stock

1+ parts

$1.219

100+ parts

-

1k+ parts

$1.097

10k+ parts

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392

$1.219

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$1.097

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MKK Technologies

India . 1,580 parts In-Stock

1+ parts

$2.292

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1,580

$2.292

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DigiPath Technology Company

USA . 1,580 parts In-Stock

1+ parts

$2.292

100+ parts

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1,580

$2.292

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Corphita

USA . 2,517 parts In-Stock

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2,517

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Parana Technologies

USA . 1,018 parts In-Stock

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100+ parts

$1.458

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1,018

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$1.458

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Overview

Unleash the power of innovation with the SD1680 RF Power Bipolar Junction Transistor by STMicroelectronics. This cutting-edge transistor offers unparalleled performance and reliability, making it the ideal choice for high-frequency amplifier applications. With a maximum power dissipation of 310W and a maximum operating temperature of 200 °C, this transistor delivers exceptional value and benefits to customers seeking top-notch quality and efficiency. Upgrade your designs with the SD1680 and experience next-level performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and cost-effective, suitable for mass production.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: COMMON EMITTER, 2 ELEMENTS

The common emitter configuration provides high and stable gain, while having 2 elements allows for enhanced performance in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Being surface mountable, this transistor facilitates easy and efficient assembly on circuit boards, saving time and effort.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on the circuit board, enabling compact and sleek design.

Terminal Form: FLAT

The flat terminal form ensures secure and reliable connections, improving overall performance and durability of the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

With ultra high frequency band capability, this transistor is suitable for applications requiring high-speed signal processing.

Maximum Power Dissipation (Abs): 310 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating or failure.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting, making it ideal for various applications.

Minimum DC Current Gain (hFE): 15

Having a minimum DC current gain of 15 ensures stable and consistent amplification of the input signal, improving overall performance.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliability in various environmental conditions.

Maximum Collector-Base Capacitance: 100 pF

The low collector-base capacitance helps reduce signal distortion, ensuring accurate signal amplification.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30V allows for safe and reliable operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and efficiency, making this transistor a durable and dependable choice.

Maximum Collector Current (IC): 0.4 A

With a maximum collector current of 0.4A, this transistor can handle moderate current levels, suitable for a variety of applications.

Terminal Position: DUAL

The dual terminal position allows for easy connectivity and compatibility with standard circuit designs, enhancing flexibility in use.

Case Connection: EMITTER

The emitter case connection facilitates efficient heat dissipation, ensuring reliable performance and longevity of the transistor.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1680 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

100 pF

Maximum Collector-Emitter Voltage:

30 V

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F4

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1680 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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