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SD1650

STMicroelectronics

SD1650 by STMicroelectronics

SD1650 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 175W and can handle a collector-emitter voltage of 28V. Ideal for amplifier applications due to its high-frequency capabilities and power handling capacity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,782 parts In-Stock

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3,782

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Anansix

USA . 2,466 parts In-Stock

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2,466

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Digiode

USA . 1,246 parts In-Stock

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1,246

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 545 parts In-Stock

1+ parts

$1.574

100+ parts

-

1k+ parts

$1.417

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545

$1.574

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$1.417

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MKK Technologies

India . 514 parts In-Stock

1+ parts

$2.960

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514

$2.960

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DigiPath Technology Company

USA . 514 parts In-Stock

1+ parts

$2.960

100+ parts

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514

$2.960

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Corphita

USA . 2,343 parts In-Stock

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2,343

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Parana Technologies

USA . 1,234 parts In-Stock

1+ parts

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$1.882

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1,234

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$1.882

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Overview

Unleash the power of cutting-edge technology with the SD1650 by STMicroelectronics. Crafted with precision and expertise, this RF Power BJT transistor offers unparalleled performance in amplifier applications within the ultra-high frequency band. With a maximum power dissipation of 175W and a high DC current gain, this transistor is engineered to deliver superior results. Experience seamless integration with its surface mount capability and rectangular package shape. Elevate your projects to new heights with the SD1650 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that offers good protection for the transistor.

Polarity or Channel Type: NPN

Common type of BJT that is suitable for various applications, especially in amplifiers.

Configuration: SINGLE

Simplified circuit design and ease of use for single transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Efficient mounting option for automated assembly processes, saving time and effort during production.

Package Shape: RECTANGULAR

Compact shape that allows for easy placement on circuit boards and efficient use of space.

Terminal Form: FLAT

Simplifies soldering process and provides better contact with the circuit board.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-speed applications and enables high-frequency signal amplification.

No. of Terminals: 6

Offers flexibility in connecting external components for custom circuit configurations.

Maximum Power Dissipation (Abs): 175 W

Capable of handling high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Provides secure mounting and heat dissipation for improved performance and longevity.

Minimum DC Current Gain (hFE): 20

Ensures stable and predictable amplification of input signals with a minimum gain factor.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures, making it suitable for industrial and high-power applications.

Maximum Collector-Emitter Voltage: 28 V

Allows for operation at higher voltages, increasing the range of compatible circuits and applications.

Transistor Element Material: SILICON

Common material known for its reliability and stable performance in electronic components.

Maximum Collector Current (IC): 0.3 A

Capable of handling relatively high currents for efficient signal amplification.

Terminal Position: DUAL

Provides flexibility in circuit connections and allows for multiple connection options.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1650 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

28 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1650 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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