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MSC81035M

STMicroelectronics

MSC81035M by STMicroelectronics

STMicroelectronics' MSC81035M is a NPN RF BJT transistor with 150W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 3A and operates up to 200 °C. The package style is flange mount with a radial terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,609 parts In-Stock

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3,609

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Vyrian

USA . 2,595 parts In-Stock

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2,595

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Anansix

USA . 2,085 parts In-Stock

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A&K Electronics

USA . 3 parts In-Stock

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Bristol Electronics

USA . 3 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 871 parts In-Stock

1+ parts

$1.225

100+ parts

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$1.102

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871

$1.225

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$1.102

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MKK Technologies

India . 2,034 parts In-Stock

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$2.303

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2,034

$2.303

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DigiPath Technology Company

USA . 2,034 parts In-Stock

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$2.303

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2,034

$2.303

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Corphita

USA . 4,507 parts In-Stock

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Parana Technologies

USA . 2,088 parts In-Stock

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$1.464

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2,088

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$1.464

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Overview

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Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good amplification characteristics.

Configuration: SINGLE

Single configuration transistors are easier to handle and are suitable for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in controlling circuit operations.

Package Shape: ROUND

The round package shape provides convenient mounting options and allows for easy integration into different electronic systems.

Terminal Form: FLAT

Flat terminals facilitate reliable connections and ensure stability in circuit implementations.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for applications requiring signals in this specific band.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to use and ideal for basic circuit designs.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation capacity, this transistor can handle significant power levels without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting in electronic systems.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain ensures consistent amplification performance in various circuit configurations.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated thermal conditions without performance degradation.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and high reliability, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 3 A

With a high maximum collector current rating, this transistor can handle significant current levels without damage.

Terminal Position: RADIAL

Radial terminal positioning simplifies circuit connections and ensures stable operation in various electronic setups.

Case Connection: BASE

The base case connection provides a convenient interface for integrating the transistor into different circuit configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC81035M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-PRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MSC81035M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-082-6228, 5961010826228

NIIN

010826228

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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