Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' MSC81035M is a NPN RF BJT transistor with 150W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 3A and operates up to 200 °C. The package style is flange mount with a radial terminal position.
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The use of plastic/epoxy material for the package body makes the transistor lightweight and cost-effective.
NPN transistors are commonly used in switching applications and offer good amplification characteristics.
Single configuration transistors are easier to handle and are suitable for basic switching applications.
Designed specifically for switching applications, this transistor offers efficient performance in controlling circuit operations.
The round package shape provides convenient mounting options and allows for easy integration into different electronic systems.
Flat terminals facilitate reliable connections and ensure stability in circuit implementations.
Operating in the L band frequency range, this transistor is suitable for applications requiring signals in this specific band.
With only 2 terminals, this transistor is simple to use and ideal for basic circuit designs.
With a high maximum power dissipation capacity, this transistor can handle significant power levels without overheating.
The flange mount package style allows for easy installation and secure mounting in electronic systems.
The minimum DC current gain ensures consistent amplification performance in various circuit configurations.
With a high maximum operating temperature, this transistor can withstand elevated thermal conditions without performance degradation.
Silicon transistors offer good performance characteristics and high reliability, making them suitable for a wide range of applications.
With a high maximum collector current rating, this transistor can handle significant current levels without damage.
Radial terminal positioning simplifies circuit connections and ensures stable operation in various electronic setups.
The base case connection provides a convenient interface for integrating the transistor into different circuit configurations.
RF Power Bipolar Junction Transistors (BJT) MSC81035M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
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Transistor Application:
Transistor Element Material:
MSC81035M Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-082-6228, 5961010826228
NIIN
010826228
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N2222A
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Semicoa
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
SMBJ18CA
Shenzhen Socay Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
National Semiconductor
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
1N4148WS
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
Weitron Technology
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
BLT53
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3900 MHz; Maximum Power Dissipation (Abs): 35.5 W; Maximum Collector Current (IC): 2.5 A;
2SC3613
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
2SC2290
The Toshiba 2SC2290 is a NPN RF Power BJT with 11.8 dB power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 175W, collector-emitter voltage of 18V, and transition frequency of 100MHz.
MX1011B430W
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Highest Frequency Band: L BAND; Maximum Collector-Emitter Voltage: 20 V;
BLT52T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Shape: RECTANGULAR; Maximum Power Dissipation Ambient: 23 W;
BLX98
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT;
PTB20081
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
BLW89
BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.
933783040114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
MSC82005
STMicroelectronics
STMicroelectronics' MSC82005 is a NPN RF BJT with 29W power dissipation, ideal for L Band amplification. Featuring a ceramic-metal package, it has hFE of 15 and IC of 1A, suitable for high-frequency applications up to 200 °C.
ISL73127RHF/PROTO
Renesas Electronics
RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;
MRF224
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7 A; Qualification: Not Qualified;
BLS2731-50TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
PTB23005X
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.7 W; Maximum Collector Current (IC): .75 A; Terminal Position: RADIAL;
MRF426
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Terminal Form: FLAT;
RZ2731B32W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Terminal Form: FLAT; No. of Elements: 1;
BDP954H6327TR
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-30 Code: R-PDSO-G4;
BLV13
BLV13 by NXP Semiconductors is an NPN RF power BJT designed for amplifiers, featuring a min power gain of 8.5 dB and a nominal transition frequency of 1650 MHz. It operates at max temperatures of 200 °C with a collector current up to 8 A. Its robust ceramic-metal sealed package ensures reliability in very high-frequency applications.
SD1458
SD1458 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 140W. Ideal for amplifier applications in the VHF band, it has a max collector-emitter voltage of 35V and operates at up to 175 °C.
BLS2731-50,114
NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
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MSC82307
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.4 W; Maximum Collector Current (IC): 1.2 A; Terminal Form: FLAT;
MSC81350M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 720 W; Maximum Collector Current (IC): 19.8 A; Case Connection: BASE;
MSC82304
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.5 W; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
MSC81450M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 910 W; Maximum Collector Current (IC): 28 A; Package Shape: RECTANGULAR;
MSC81250M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 17.8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC83303
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .54 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC81005
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18.8 W; Maximum Collector Current (IC): .6 A; Package Shape: ROUND;
MSC81400M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 28 A; Case Connection: BASE;
MSC81035MP
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Terminal Position: RADIAL;
MSC82010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 15;
MSC82003
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC81111
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC82306
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .9 A; Transistor Element Material: SILICON;
MSC81020
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
MSC81325M
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 24 A; Highest Frequency Band: L BAND;
MSC80197
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .7 A; No. of Terminals: 2;
MSC81010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT;
MSC81058
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-CRFM-F2;
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