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MSC81250M

STMicroelectronics

MSC81250M by STMicroelectronics

STMicroelectronics' MSC81250M is a NPN RF BJT transistor with 600W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 17.8A and operates at up to 200 °C temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,423 parts In-Stock

1+ parts

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4,423

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Vyrian

USA . 3,868 parts In-Stock

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3,868

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Anansix

USA . 1,916 parts In-Stock

1+ parts

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1,916

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 105 parts In-Stock

1+ parts

$0.546

100+ parts

-

1k+ parts

$0.491

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105

$0.546

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$0.491

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MKK Technologies

India . 1,687 parts In-Stock

1+ parts

$1.026

100+ parts

-

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1,687

$1.026

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DigiPath Technology Company

USA . 1,687 parts In-Stock

1+ parts

$1.026

100+ parts

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1,687

$1.026

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Corphita

USA . 3,189 parts In-Stock

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3,189

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Parana Technologies

USA . 899 parts In-Stock

1+ parts

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100+ parts

$0.652

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899

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$0.652

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Overview

Unleash the power of innovation with the MSC81250M by STMicroelectronics, a cutting-edge RF Power Bipolar Junction Transistor designed for high-performance switching applications. Crafted with precision and quality in mind, this NPN transistor offers unparalleled reliability and efficiency. From L Band frequencies to a maximum power dissipation of 600W, this transistor is engineered to deliver exceptional performance in demanding environments. Experience the value and benefits of superior technology with the MSC81250M, setting new standards in the industry. Step into the future of RF power transistors and elevate your projects to new heights with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent heat dissipation and durability, ensuring a long lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

A single configuration simplifies the design and implementation of the transistor in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Surface Mount: YES

The ability to surface mount this transistor allows for easy integration into compact electronic devices.

Package Shape: SQUARE

The square package shape provides a uniform footprint for standardized design layouts.

Terminal Form: FLAT

Flat terminals offer easy soldering and secure connections in circuit assemblies.

Highest Frequency Band: L BAND

Optimized for the L band frequency range, this transistor is ideal for applications in this frequency band.

Maximum Power Dissipation (Abs): 600 W

With a high maximum power dissipation, this transistor can handle high power loads with ease.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a robust mounting mechanism for secure installation in electronic systems.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 200 °C

Operational at temperatures up to 200 °C, this transistor offers a wide operating range for various environments.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 17.8 A

Capable of handling high collector currents, this transistor is suitable for power applications requiring high current capabilities.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit connections and layout options for design versatility.

Case Connection: BASE

The base connection allows for easy integration into circuit designs and ensures proper functioning within the circuit.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC81250M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MSC81250M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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