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BLV94

NXP Semiconductors

BLV94 by NXP Semiconductors

BLV94 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 6 dB, operates at ultra-high frequencies, and supports a max collector current of 3 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

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3

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1k+

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Digiode

USA . 1,798 parts In-Stock

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Anansix

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Vyrian

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Native Components

USA . 715 parts In-Stock

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Northwest PG Solutions

USA . 1,867 parts In-Stock

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One Stop Electronics

USA . 510 parts In-Stock

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UNI Independent Distributors

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Corphita

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Kepictronics

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Overview

Experience unmatched performance with the BLV94 transistor from NXP Semiconductors, a trusted leader in innovative technology. Designed for superior amplification in ultra-high frequency applications, this robust ceramic and metal-sealed device ensures reliability even in extreme conditions. With its exceptional power gain and compact surface mount design, the BLV94 offers engineers the flexibility they need to create high-quality solutions, guaranteeing enhanced efficiency and durability for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired construction enhances durability and thermal stability, making this transistor suitable for demanding applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in amplifiers, providing efficient switching and amplification capabilities.

Configuration: SINGLE

The single configuration allows for simpler design and integration into various circuits, making it versatile for different applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability allows for compact PCB designs, facilitating miniaturization of electronic devices.

Minimum Power Gain (Gp): 6 dB

With a minimum power gain of 6 dB, this transistor delivers adequate amplification, suitable for enhancing weak signals.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier mounting and placement on circuit boards, optimizing space utilization.

Terminal Form: FLAT

Flat terminal form ensures better contact with the PCB, enhancing soldering reliability and mechanical stability.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band makes this transistor ideal for RF applications, including communications and radar.

No. of Terminals: 6

With 6 terminals, the transistor offers ample connection options for complex circuit designs while maintaining simplicity.

Package Style (Meter): FLANGE MOUNT

The flange mount design provides robust mounting options, ensuring secure placement in various applications.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable performance in circuit designs requiring current amplification.

Maximum Operating Temperature: 200 °C

The ability to operate at temperatures up to 200 °C makes this transistor suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 16 V

A maximum collector-emitter voltage of 16 V allows for safe operation in various applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon material offers excellent electrical characteristics and reliability, critical for consistent performance.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle significant power levels, making it suitable for high-power applications.

Terminal Position: DUAL

Dual terminal positioning allows for versatile circuit configurations and improved connection options.

Case Connection: ISOLATED

An isolated case connection enhances safety by preventing accidental short-circuits, ensuring more reliable operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV94 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

6 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV94 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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