Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1224-10 by STMicroelectronics is an NPN RF Power BJT with 80W power dissipation, 36V max collector-emitter voltage, and 4.5A max collector current. It is used in applications requiring high-power amplification in radio frequency circuits.
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$0.965
DigiPath Technology Company
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$0.614
Assy Fe
The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring reliable performance in various applications.
NPN polarity allows for easy integration into common electronic circuits, making it versatile and widely compatible.
Single configuration simplifies circuit design and installation, reducing complexity and potential errors.
Round package shape enhances thermal management and facilitates easy mounting in tight spaces.
Flat terminals enable secure connections and ease of soldering during installation.
Four terminals provide efficient power handling and connectivity options for different circuit configurations.
High power dissipation capability of 80W allows for reliable operation in high-performance applications.
Flange mount package style offers secure and stable mounting, ensuring mechanical integrity in various environments.
Minimum DC current gain of 10 ensures consistent and predictable amplification characteristics in signal processing.
High maximum operating temperature of 200 °C enables operation in demanding thermal conditions without performance degradation.
Low collector-base capacitance of 65pF minimizes signal distortion and improves high-frequency performance in RF applications.
High collector-emitter voltage rating of 36V provides robust protection against voltage spikes and overloads.
Silicon transistor element material offers high reliability, low leakage, and excellent performance in RF power applications.
High collector current rating of 4.5A ensures efficient power handling capacity for demanding RF power applications.
Radial terminal position facilitates easy PCB mounting and soldering, enhancing installation efficiency.
RF Power Bipolar Junction Transistors (BJT) SD1224-10 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Element Material:
SD1224-10 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
2N2222A
Electronic Transistors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
LM358N
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SPC TECHNOLOGY/ MULTICOMP
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
2N7002,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
M39029/56-351
Glenair
CONNECTOR ACCESSORY; Associated Backshell Military - Specifications: MIL-DTL-38999; Material: COPPER ALLOY; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: FEMALE; DIN Conformity: NO;
MMBT3906LT1G
Onsemi
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
LM358AN
Fairchild Semiconductor
CRCW04020000Z0EDHP
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
Plessey Semiconductors Discrete Components Div
Other Transistors;
1214-110M
Microsemi
Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.
MRF392
Tyco Electronics M/a-com
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MSC81035M
STMicroelectronics
STMicroelectronics' MSC81035M is a NPN RF BJT transistor with 150W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 3A and operates up to 200 °C. The package style is flange mount with a radial terminal position.
BLV958FL-T
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
MSB11900Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 50 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934016870114
NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: BASE; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;
MTB10010U
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): .75 A; Package Shape: ROUND;
LV2327E40R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;
2SC2290
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A;
BFG741TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;
SD1275-01
STMicroelectronics' SD1275-01 is a NPN RF BJT with 70W power dissipation, 160MHz fT, and 8A IC. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 16V and very high frequency band capability. Package style is flange mount with a round shape and flat terminals.
SD1897
SD1897 by STMicroelectronics is a NPN RF Power BJT with 29W power dissipation, suitable for L Band applications. It has a max collector current of 2.3A and operates at up to 200°C temperature. Ideal for amplifier circuits in surface mount configurations.
MRF6404
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
BLW79
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 9 dB;
LLE15180XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15; Minimum Power Gain (Gp): 7.8 dB;
LXE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Terminals: 2; Case Connection: EMITTER;
LWE2010STRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .11 A; Package Shape: ROUND; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
ISL73127RHVX
Renesas Electronics
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Style (Meter): UNCASED CHIP;
BLT50,115
The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.
2SC2101
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 4; Maximum Collector-Base Capacitance: 25 pF;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
SD1224-02
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A;
SD1274
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;
SD1274-01
SD1275
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;
SD1285
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; Transistor Element Material: SILICON;
SD1272-02
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 4 A; No. of Elements: 1;
SD1272
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 4 A;
SD1224
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A; Terminal Form: FLAT;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 5 A; Transistor Application: AMPLIFIER;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 4 A; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; Terminal Form: FLAT;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Base Capacitance: 65 pF;
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