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SD1224-10

STMicroelectronics

SD1224-10 by STMicroelectronics

SD1224-10 by STMicroelectronics is an NPN RF Power BJT with 80W power dissipation, 36V max collector-emitter voltage, and 4.5A max collector current. It is used in applications requiring high-power amplification in radio frequency circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,233 parts In-Stock

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4,233

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Vyrian

USA . 2,244 parts In-Stock

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2,244

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Anansix

USA . 642 parts In-Stock

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642

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IDEA Electronic Components Group

UK . 2,317 parts In-Stock

1+ parts

$0.513

100+ parts

-

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$0.462

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2,317

$0.513

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$0.462

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MKK Technologies

India . 1,904 parts In-Stock

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$0.965

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1,904

$0.965

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DigiPath Technology Company

USA . 1,904 parts In-Stock

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$0.965

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1,904

$0.965

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Corphita

USA . 2,649 parts In-Stock

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2,649

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Parana Technologies

USA . 1,266 parts In-Stock

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$0.614

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1,266

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$0.614

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Assy Fe

Spain . 10 parts In-Stock

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10

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Overview

Elevate your RF power applications with the high-quality SD1224-10 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch products like this RF Power Bipolar Junction Transistor with NPN polarity, offering superior performance and reliability. Whether you're designing communication systems, radar equipment, or industrial control systems, this transistor's 80W maximum power dissipation and 4.5A maximum collector current ensure optimal functionality. Trust STMicroelectronics to provide cutting-edge technology that exceeds your expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into common electronic circuits, making it versatile and widely compatible.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, reducing complexity and potential errors.

Package Shape: ROUND

Round package shape enhances thermal management and facilitates easy mounting in tight spaces.

Terminal Form: FLAT

Flat terminals enable secure connections and ease of soldering during installation.

No. of Terminals: 4

Four terminals provide efficient power handling and connectivity options for different circuit configurations.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capability of 80W allows for reliable operation in high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure and stable mounting, ensuring mechanical integrity in various environments.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures consistent and predictable amplification characteristics in signal processing.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C enables operation in demanding thermal conditions without performance degradation.

Maximum Collector-Base Capacitance: 65 pF

Low collector-base capacitance of 65pF minimizes signal distortion and improves high-frequency performance in RF applications.

Maximum Collector-Emitter Voltage: 36 V

High collector-emitter voltage rating of 36V provides robust protection against voltage spikes and overloads.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability, low leakage, and excellent performance in RF power applications.

Maximum Collector Current (IC): 4.5 A

High collector current rating of 4.5A ensures efficient power handling capacity for demanding RF power applications.

Terminal Position: RADIAL

Radial terminal position facilitates easy PCB mounting and soldering, enhancing installation efficiency.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1224-10 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

65 pF

Maximum Collector-Emitter Voltage:

36 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1224-10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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