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SD1274-01

STMicroelectronics

SD1274-01 by STMicroelectronics

STMicroelectronics' SD1274-01 is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for high-frequency amplifier applications due to its very high frequency band capability. Package: PLASTIC/EPOXY, SINGLE configuration, FLANGE MOUNT style.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,983 parts In-Stock

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Vyrian

USA . 2,399 parts In-Stock

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2,399

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ComSIT Distribution GmbH

Germany . 757 parts In-Stock

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Anansix

USA . 260 parts In-Stock

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Standard Data Resources

USA . 5 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 753 parts In-Stock

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$1.550

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$1.395

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753

$1.550

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$1.395

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MKK Technologies

India . 895 parts In-Stock

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$2.915

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895

$2.915

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DigiPath Technology Company

USA . 895 parts In-Stock

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$2.915

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895

$2.915

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Component Stockers USA

USA . 224 parts In-Stock

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$523.290

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QUARKTWIN TECHNOLOGY LTD

USA . 15,156 parts In-Stock

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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Corphita

USA . 3,943 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Parana Technologies

USA . 82 parts In-Stock

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$1.854

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Perfect Parts

USA . 34 parts In-Stock

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Overview

Experience the power and precision of the SD1274-01 RF Power BJT by STMicroelectronics. With a reputation for quality and reliability, this transistor offers exceptional performance in amplifier applications within the very high-frequency band. Its single configuration and NPN polarity make it easy to integrate into your designs, while its 70W maximum power dissipation ensures durability under demanding conditions. Trust STMicroelectronics to deliver industry-leading technology that meets your needs for efficiency and effectiveness. Choose the SD1274-01 for uncompromising excellence in RF power amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, increasing its reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic systems.

Terminal Form: FLAT

Flat terminals provide a secure and stable connection, reducing the risk of loose connections or malfunctions.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency operation, making it ideal for advanced communication systems.

No. of Terminals: 4

Provides multiple connection points for flexible integration into circuit designs.

Maximum Power Dissipation (Abs): 70 W

High power dissipation capability allows for efficient handling of power within the transistor, preventing overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and secure mounting in electronic systems.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain ensures consistent performance in amplification tasks, maintaining signal integrity.

Maximum Operating Temperature: 200 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 16 V

Provides a high voltage tolerance, making it suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in operation, offering a durable and efficient transistor element.

Maximum Collector Current (IC): 8 A

High collector current capacity allows for efficient handling of current within the transistor, ensuring optimal performance.

Terminal Position: RADIAL

Radial terminal positioning facilitates easy connections and integration into various circuit layouts.

Nominal Transition Frequency (fT): 175 MHz

High nominal transition frequency ensures fast response times and efficient operation in high-frequency applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1274-01 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SD1274-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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