Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1224-02 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at up to 200 °C, and supports frequencies up to 175MHz. Its ceramic, metal-sealed package ensures durability in demanding environments.
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$1.296
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$0.824
The durable ceramic and metal-sealed co-fired package ensures excellent thermal stability and reliability, making the transistor suitable for high-performance applications.
The NPN configuration is widely used in amplification and switching applications, ensuring compatibility with a variety of circuit designs.
A single transistor configuration simplifies circuit design and provides a compact solution for RF amplification.
Optimized for amplifier applications, this transistor is ideal for enhancing signal strength in various RF and high-frequency scenarios.
The round package shape aids in effective thermal dissipation and provides a robust mechanical structure.
Flat terminals facilitate easy mounting and connection to PCB, ensuring a secure fit and reliable electrical performance.
Operating in the very high frequency band makes this transistor suitable for advanced RF communications and high-speed applications.
The four-terminal configuration enables versatile connection options and simplifies integration into various circuit designs.
With a high maximum power dissipation, this transistor can handle significant power without overheating, making it reliable for demanding applications.
The flange mount design allows for secure and stable installation in various settings, enhancing mechanical reliability.
A minimum current gain of 5 ensures effective amplification, making the transistor suitable for low-signal applications.
The ability to operate at a maximum temperature of 200 °C guarantees functionality in high-temperature environments, extending its operational range.
Low capacitance ensures minimal signal loss and better performance at high frequencies, making it an excellent choice for RF applications.
A maximum voltage rating of 35 V offers versatility and safety in various circuit designs, protecting against voltage spikes.
Silicon as the element material provides good electrical characteristics and stability, making it reliable for high-frequency applications.
The high collector current capability allows for driving heavy loads, suitable for power amplification tasks.
Radial terminal positioning enables efficient use of board space and simplifies component placement in compact designs.
A nominal transition frequency of 175 MHz indicates suitability for high-frequency amplification, essential for modern RF circuits.
RF Power Bipolar Junction Transistors (BJT) SD1224-02 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
SD1224-02 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SMBJ18CA
Diodes Incorporated
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
DP83848IVVX/NOPB
Texas Instruments
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Daco Semiconductor
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MX1011B700YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Terminal Position: DUAL; Transistor Element Material: SILICON;
SD1895-03
STMicroelectronics
STMicroelectronics' SD1895-03 is a NPN RF Power BJT with 37.2W power dissipation, suitable for L Band applications. Featuring 3A max collector current and 15V max collector-emitter voltage, it is designed for high-frequency operations up to 200 °C in a plastic/epoxy package.
BLS2731-50TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
LXE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Terminals: 2; Case Connection: EMITTER;
BDP948H6327XTSA1
Infineon Technologies
Infineon's BDP948H6327XTSA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mounting.
BLF182XRS
RF Power Bipolar Transistors;
MZ0912B50YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; JESD-30 Code: R-CDFM-F2; Maximum Collector-Emitter Voltage: 20 V;
PTB42001X
NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-CRFM-F2;
2N4128
The Texas Instruments 2N4128 is an NPN RF BJT with a max. collector-emitter voltage of 40V and max. power dissipation of 40W. Ideal for very high frequency band applications, it has a nominal transition frequency of 400MHz and can handle a max. collector current of 5A.
BLY91C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .75 A; No. of Elements: 1;
MRF6414
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 134 W; Maximum Collector Current (IC): 6 A; Additional Features: WITH EMITTER BALLASTING RESISTORS;
933448540112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3400 MHz; Maximum Collector Current (IC): 1.25 A; Package Shape: ROUND;
SD1680
SD1680 by STMicroelectronics is an NPN RF BJT with 2 elements, suitable for amplifier applications in the UHF band. It has a max power dissipation of 310W, hFE of 15, and operates up to 200 °C. The transistor features a common emitter configuration in a rectangular package with flange mount style.
BFQ108
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .3 A; Transistor Application: AMPLIFIER;
SD4100
SD4100 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 220 W and operating temp up to 200 °C. It supports ultra-high frequency bands with a collector current of 16 A. Its ceramic, metal-sealed package ensures durability in demanding environments.
RZ2731B60W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 5.7 A; Highest Frequency Band: S BAND;
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Additional Features: HIGH RELIABILITY;
BLV2042
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Terminal Form: GULL WING;
BLS2731-20,114
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: BASE; Package Style (Meter): FLANGE MOUNT;
2SC5551AE-TD-E
RF Power Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
SD1224-10
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; JESD-30 Code: O-PRFM-F4;
SD1274
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;
SD1274-01
SD1275
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY;
SD1275-01
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;
SD1285
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; Transistor Element Material: SILICON;
SD1272-02
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 4 A; No. of Elements: 1;
SD1272
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 4 A;
SD1224
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A; Terminal Form: FLAT;
SD1224-02
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 5 A; Transistor Application: AMPLIFIER;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 4 A; Qualification: Not Qualified;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; Terminal Form: FLAT;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT;
SD1219
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 6.5 A;
SD1222-5
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Base Capacitance: 65 pF;
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