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MX0912B251Y

NXP Semiconductors

MX0912B251Y by NXP Semiconductors

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

Median Price

$245.710

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,110 parts In-Stock

1+ parts

$245.710

100+ parts

$230.970

1k+ parts

$216.220

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4,110

$245.710

$230.970

$216.220

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RFMW

USA . 106 parts In-Stock

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106

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Digiode

USA . 4,149 parts In-Stock

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$271.710

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4,149

$271.710

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Vyrian

USA . 1,748 parts In-Stock

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$286.010

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1,748

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Anansix

USA . 2,665 parts In-Stock

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2,665

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DigiKey Marketplace

USA . 385 parts In-Stock

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385

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Distributors (Availability)

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Corphita

USA . 1,434 parts In-Stock

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$257.409

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1,434

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Microchip USA

USA . 5,250 parts In-Stock

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$374.385

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5,250

$374.385

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A-Z Elektronik GmbH

Germany . 5,510 parts In-Stock

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5,510

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UNI Independent Distributors

Spain . 4,326 parts In-Stock

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Perfect Parts

USA . 128 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MX0912B251Y by NXP Semiconductors. This RF Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, making it ideal for amplifier applications in the L band. With a maximum power dissipation of 690W and a minimum power gain of 7dB, this transistor delivers superior functionality and efficiency. Experience seamless connectivity and enhanced signal amplification with the MX0912B251Y, the ultimate choice for all your RF power needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material offers high reliability and durability, making the transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor ideal for amplifier applications.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, this transistor provides good amplification capabilities.

Surface Mount: YES

Being surface mountable, this transistor can be easily integrated into compact electronic designs.

Maximum Power Dissipation (Abs): 690 W

The high maximum power dissipation capability of 690 W allows this transistor to handle high power levels without overheating.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20 V ensures safe operation within specified parameters.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor is capable of handling high current levels in various applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MX0912B251Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

DIFFUSED EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MX0912B251Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-554-0588, 5961015540588

NIIN

015540588

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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