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MX0912B351Y

Asi Semiconductor

MX0912B351Y by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): FLANGE MOUNT;

Median Price

$226.170

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 188 parts In-Stock

1+ parts

$201.040

100+ parts

$188.980

1k+ parts

$176.920

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188

$201.040

$188.980

$176.920

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DigiKey

USA . 188 parts In-Stock

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$251.300

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188

$251.300

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Digiode

USA . 2,258 parts In-Stock

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$222.319

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2,258

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Vyrian

USA . 6,919 parts In-Stock

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Anansix

USA . 1,287 parts In-Stock

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DigiKey Marketplace

USA . 27 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,910 parts In-Stock

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$210.618

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2,910

$210.618

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Microchip USA

USA . 3,042 parts In-Stock

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$336.960

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3,042

$336.960

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A-Z Elektronik GmbH

Germany . 5,138 parts In-Stock

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5,138

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UNI Independent Distributors

Spain . 2,990 parts In-Stock

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2,990

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Perfect Parts

USA . 128 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MX0912B351Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MX0912B351Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-394-5756, 5961013945756, 5961-01-394-0071, 5961013940071

NIIN

013945756, 013940071

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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