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SD1458

STMicroelectronics

SD1458 by STMicroelectronics

SD1458 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 140W. Ideal for amplifier applications in the VHF band, it has a max collector-emitter voltage of 35V and operates at up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,561 parts In-Stock

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1,561

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Vyrian

USA . 707 parts In-Stock

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707

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Anansix

USA . 346 parts In-Stock

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346

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LittleDiode

UK . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 2,304 parts In-Stock

1+ parts

$0.627

100+ parts

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$0.564

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2,304

$0.627

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$0.564

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MKK Technologies

India . 727 parts In-Stock

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$1.178

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727

$1.178

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DigiPath Technology Company

USA . 727 parts In-Stock

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$1.178

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727

$1.178

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Corphita

USA . 1,962 parts In-Stock

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Parana Technologies

USA . 401 parts In-Stock

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$0.749

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$0.749

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Overview

Elevate your RF power amplifier designs with the SD1458 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. The SD1458 is a versatile NPN transistor that excels in very high-frequency applications, making it ideal for amplifiers. With a maximum power dissipation of 140W and a collector-emitter voltage of 35V, this transistor delivers exceptional performance. Trust STMicroelectronics to provide you with cutting-edge technology that brings value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal performance and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration with other NPN components in circuit design.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: AMPLIFIER

Optimized for amplification tasks in various electronic devices.

Surface Mount: YES

Enables easy mounting and soldering onto circuit boards, enhancing manufacturing efficiency.

Package Shape: ROUND

Helps in efficient layout and placement on circuit boards.

Terminal Form: FLAT

Facilitates secure electrical connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency applications where signal integrity is crucial.

No. of Terminals: 6

Provides flexibility in circuit connections.

Maximum Power Dissipation (Abs): 140 W

Can handle high power levels without risk of damage.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting in various configurations.

Minimum DC Current Gain (hFE): 10

Indicates good amplification capability.

Maximum Operating Temperature: 175 °C

Ensures reliable performance even in high-temperature environments.

Maximum Collector-Base Capacitance: 80 pF

Helps in reducing unwanted signal distortion.

Maximum Collector-Emitter Voltage: 35 V

Provides a safe operating range for voltage amplification.

Transistor Element Material: SILICON

Known for its reliability and efficiency in electronic devices.

Maximum Collector Current (IC): 10 A

Can handle high current levels for amplification tasks.

Terminal Finish: GOLD

Ensures good electrical conductivity and resistance to corrosion.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1458 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

80 pF

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PXFM-F6

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1458 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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