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SD1405

STMicroelectronics

SD1405 by STMicroelectronics

STMicroelectronics' SD1405 is a NPN RF Power BJT with 18V VCE, 20A IC, and high-frequency band. Ideal for amplifier applications, it features a plastic/epoxy package, single configuration, and radial terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,922 parts In-Stock

1+ parts

-

100+ parts

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1,922

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Anansix

USA . 1,399 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,399

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Vyrian

USA . 1,263 parts In-Stock

1+ parts

-

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1,263

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,419 parts In-Stock

1+ parts

$1.716

100+ parts

-

1k+ parts

$1.544

10k+ parts

-

1,419

$1.716

-

$1.544

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MKK Technologies

India . 1,402 parts In-Stock

1+ parts

$3.226

100+ parts

-

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-

10k+ parts

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1,402

$3.226

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DigiPath Technology Company

USA . 1,402 parts In-Stock

1+ parts

$3.226

100+ parts

-

1k+ parts

-

10k+ parts

-

1,402

$3.226

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-

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Corphita

USA . 1,133 parts In-Stock

1+ parts

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1,133

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Parana Technologies

USA . 723 parts In-Stock

1+ parts

-

100+ parts

$2.052

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10k+ parts

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723

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$2.052

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Overview

Unlock the power of high-frequency amplification with the SD1405 by STMicroelectronics. Designed with precision and reliability in mind, this RF Power BJT transistor offers unmatched performance for a wide range of applications. Whether you're looking to enhance your audio equipment or boost signal strength in communication devices, the SD1405 delivers exceptional quality and value. Trust in STMicroelectronics' expertise in semiconductor technology to bring you a product that exceeds expectations. Elevate your projects with the SD1405 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, perfect for portable or automotive applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other signal processing applications, ensuring compatibility and ease of integration.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in amplifying signals.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and easy mounting, ensuring optimal performance and reliability.

Terminal Form: FLAT

Flat terminals provide a secure and stable connection, reducing the risk of signal loss or interference in the circuit.

No. of Terminals: 4

Having 4 terminals allows for flexibility in circuit connections and enables the transistor to handle higher currents and voltages.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enables easy installation and secure mounting in various electronic devices or systems.

Maximum Operating Temperature: 200 °C

With a high operating temperature of 200 °C, this transistor can withstand extreme heat conditions without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 18 V

The high collector-emitter voltage rating of 18V allows for safe operation in high voltage circuits, ensuring protection against voltage spikes or surges.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high conductivity and reliability, ensuring stable and consistent performance.

Maximum Collector Current (IC): 20 A

With a maximum collector current rating of 20A, this transistor can handle high current loads, making it suitable for power amplifier applications.

Terminal Position: RADIAL

The radial terminal position allows for easy soldering and connection to the circuit board, ensuring a secure and reliable electrical connection.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1405 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1405 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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