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2SC2290

Toshiba

2SC2290 by Toshiba

The Toshiba 2SC2290 is a NPN RF Power BJT with 11.8 dB power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 175W, collector-emitter voltage of 18V, and transition frequency of 100MHz.

Median Price

$127.250

Lifecycle Status

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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Nova Conductors

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Huijzer Components

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Holdelec - ElecDif-Pro

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Ampacity Inc.

Singapore . 1,635 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of innovation with Toshiba's 2SC2290 RF Power Bipolar Junction Transistor. This high-quality component offers exceptional performance and reliability, making it ideal for a wide range of amplifier applications. With a maximum power dissipation of 175W and a minimum power gain of 11.8 dB, this NPN transistor delivers superior results in high-frequency bands. Trust Toshiba's expertise and experience to bring you cutting-edge technology that exceeds expectations. Elevate your projects with the 2SC2290 and experience the unmatched value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides high temperature resistance and durability, ensuring the transistor can operate reliably in various harsh environments.

Polarity or Channel Type: NPN

Suitable for amplification purposes and commonly used in RF applications due to its high input impedance.

Minimum Power Gain (Gp): 11.8 dB

Indicates good amplification capability, allowing for efficient signal boosting in RF amplifier circuits.

Highest Frequency Band: HIGH FREQUENCY BAND

Ideal for applications requiring high frequency operations such as communication systems and radar systems.

Maximum Power Dissipation (Abs): 175 W

Can handle high power levels without overheating, making it suitable for high-power RF applications.

Maximum Collector-Emitter Voltage: 18 V

A high voltage rating ensures the transistor can withstand voltage spikes and fluctuations in the circuit.

Maximum Collector Current (IC): 20 A

Capable of handling high current levels, making it suitable for high-power RF amplification applications.

Nominal Transition Frequency (fT): 100 MHz

Indicates the frequency at which the transistor can amplify signals effectively, making it suitable for RF applications requiring high-frequency operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2290 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

500 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

175 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

11.8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2290 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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