Loading...

2SC2290A

Toshiba

2SC2290A by Toshiba

Toshiba's 2SC2290A is a NPN RF Power BJT with 175W power dissipation, ideal for high-frequency amplifier applications. Featuring a max collector-emitter voltage of 18V and a max collector current of 20A, this transistor operates at temperatures up to 175°C in a flange mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 3,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,550

-

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

LittleDiode

UK . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 671 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

671

$1.050

-

-

-

Argo Parts USA

USA . 4,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,558

-

-

-

-

Continental Prestige Electronics

USA . 3,726 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,726

-

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Experience unparalleled performance and reliability with the 2SC2290A by Toshiba, a top-of-the-line RF Power Bipolar Junction Transistor. Known for its exceptional quality and cutting-edge technology, Toshiba delivers unmatched value to customers seeking high-frequency amplification solutions. Whether you're in need of a powerful amplifier for your audio equipment or looking to enhance your radio frequency applications, the 2SC2290A is the perfect choice. Trust Toshiba to provide you with the superior performance and long-lasting durability you deserve. Elevate your projects with the 2SC2290A today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability, making it suitable for high frequency applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuits and ensures compatibility with other components.

Configuration: SINGLE

The single configuration simplifies the design and implementation process, making it user-friendly for various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation, saving space and simplifying assembly processes.

Package Shape: ROUND

The round package shape is ideal for high frequency band applications, providing efficient heat dissipation and ensuring optimal signal integrity.

Terminal Form: FLAT

The flat terminal form enables secure connections and facilitates seamless integration into circuit boards.

Highest Frequency Band: HIGH FREQUENCY BAND

Designed for high frequency band applications, ensuring high-speed data transmission and reliable signal amplification.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit design and allows for versatile connectivity options.

Maximum Power Dissipation (Abs): 175 W

With a maximum power dissipation of 175 W, this transistor can handle high power levels without compromising performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy integration into larger systems and provides stability in high power applications.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures reliable and consistent amplification of signals.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperature environments without compromising performance.

Maximum Collector-Base Capacitance: 500 pF

The maximum collector-base capacitance of 500 pF ensures stable and reliable performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 18 V

With a maximum collector-emitter voltage of 18 V, this transistor can handle high voltage levels without breakdown, ensuring robustness in operation.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and efficiency in signal amplification.

Maximum Collector Current (IC): 20 A

With a maximum collector current of 20 A, this transistor can handle high current levels, making it suitable for power amplifier applications.

Terminal Position: RADIAL

The radial terminal position simplifies the PCB layout and enables easy soldering, ensuring secure and reliable connections.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2290A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

500 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2290A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20