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2SC2782

Toshiba

2SC2782 by Toshiba

The Toshiba 2SC2782 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 6.4 dB, max power dissipation of 220 W, and operates in the very high frequency band. This transistor has a max collector-emitter voltage of 16 V and can handle a max collector current of 20 A.

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Huijzer Components

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Ampacity Inc.

Singapore . 650 parts In-Stock

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Glotronic Ltd.

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Continental Prestige Electronics

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Overview

Unleash the power of innovation with the Toshiba 2SC2782 RF Power Bipolar Junction Transistor. Manufactured by Toshiba, a trusted name in electronics, this NPN transistor offers exceptional quality and reliability for amplifier applications in the very high-frequency band. With a maximum power dissipation of 220W and a minimum DC current gain of 10, this transistor delivers superior performance and efficiency. Experience the benefits of cutting-edge technology and elevate your projects to new heights with the Toshiba 2SC2782.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures high durability and reliability, making the product suitable for long-term use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Minimum Power Gain (Gp): 6.4 dB

The minimum power gain of 6.4 dB indicates good amplification capability, ensuring efficient signal amplification in circuits.

Maximum Power Dissipation (Abs): 220 W

With a high maximum power dissipation, this transistor can handle high-power applications without overheating or failing.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the transistor to function effectively even in high-temperature environments.

Maximum Collector Current (IC): 20 A

The high maximum collector current rating enables the transistor to handle large current loads, making it suitable for high-power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2782 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

320 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

220 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.4 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2782 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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