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1090MP

Microsemi

1090MP by Microsemi

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

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Nova Conductors

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AZTECH Wire

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Overview

Experience the power and precision of the 1090MP by Microsemi, a top-tier RF Power Bipolar Junction Transistor designed for high-performance amplifier applications in the L BAND frequency range. With a maximum power dissipation of 250W and a package body material of ceramic and metal-sealed cofired, this NPN transistor offers unparalleled reliability and durability. Trust in Microsemi's reputation for excellence and innovation as you explore the endless possibilities of the 1090MP in your next project. Unlock the potential of your designs with the unmatched value and quality that only Microsemi can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and high mechanical strength, making the transistor durable and reliable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances stability, ensuring consistent performance in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor offers high power dissipation and optimal performance under high-frequency signals.

Surface Mount: YES

With surface mount capability, this transistor can be easily integrated into PCB designs, saving space and simplifying assembly processes.

Package Shape: ROUND

The round shape of the package provides efficient thermal conduction and allows for easy mounting in compact spaces.

Terminal Form: FLAT

The flat terminal form facilitates soldering and ensures secure connections for stable performance in amplifier circuits.

Highest Frequency Band: L BAND

Suitable for L-band frequencies, this transistor enables high-frequency signal amplification for various communication and radar applications.

No. of Terminals: 4

With four terminals, this transistor offers versatile connectivity options for flexible circuit configurations in amplifier designs.

Maximum Power Dissipation (Abs): 250 W

The high power dissipation capability of 250W ensures reliable performance under heavy load conditions, making it an ideal choice for high-power amplifier applications.

Package Style (Meter): DISK BUTTON

The disk button package style provides efficient heat dissipation and mechanical support, enhancing the transistor's performance and longevity.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor ensures stable amplification and consistent output voltage in amplifier circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C allows for reliable operation in extreme temperature conditions, ensuring consistent performance in amplifier applications.

Maximum Collector-Base Capacitance: 16 pF

The low collector-base capacitance of 16pF minimizes signal distortion and improves high-frequency performance in amplifier circuits.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high efficiency and reliability, making it an excellent choice for demanding amplifier applications.

Maximum Collector Current (IC): 6.5 A

With a maximum collector current of 6.5A, this transistor can handle high current loads, making it suitable for high-power amplifier applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish ensures reliable solder joints and corrosion resistance for long-term stability in amplifier circuits.

Terminal Position: RADIAL

The radial terminal position simplifies PCB layout and facilitates easy connections, enhancing the overall efficiency of amplifier circuit designs.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 1090MP attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

16 pF

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRDB-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

1090MP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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