Loading...

2SA1537D

Onsemi

2SA1537D by Onsemi

Onsemi's 2SA1537D is a PNP RF BJT with max. Vce of 70V and Ic of 0.5A, ideal for switching applications at 700MHz. It features a plastic/epoxy body, single configuration, and through-hole terminals in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,355

-

-

-

-

Digiode

USA . 2,011 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,011

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 10 parts In-Stock

1+ parts

$0.794

100+ parts

$0.794

1k+ parts

$0.794

10k+ parts

-

10

$0.794

$0.794

$0.794

-

Native Components

USA . 50 parts In-Stock

1+ parts

$9.753

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$9.753

-

-

-

Northwest PG Solutions

USA . 315 parts In-Stock

1+ parts

$10.728

100+ parts

$9.656

1k+ parts

-

10k+ parts

-

315

$10.728

$9.656

-

-

Kulean Microsystems

USA . 8,385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,385

-

-

-

-

TANS Electronics

Latvia . 6,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,950

-

-

-

-

Problanco Electronics

Mexico . 6,198 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,198

-

-

-

-

SupplyDigital Components

Austria . 4,502 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,502

-

-

-

-

Corphita

USA . 2,386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,386

-

-

-

-

UHIMA Technologies

Türkiye . 727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

727

-

-

-

-

Corohmni

South Africa . 459 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

459

-

-

-

-

Overview

Enhance your electronic designs with the 2SA1537D RF Power Bipolar Junction Transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance in every product. Whether you're designing a new switching application or upgrading an existing one, the 2SA1537D offers value, efficiency, and versatility. Trust Onsemi to provide superior products that meet your needs and exceed your expectations. Elevate your projects with the 2SA1537D and experience the benefits of working with a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

Allows for easy integration into circuits designed for PNP transistors, making it versatile for a variety of applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to use in different projects.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast response times and efficient operation in switching circuits.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards or systems, enhancing overall design flexibility.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections to the circuit board, ensuring stable performance even under challenging conditions.

Maximum Collector-Emitter Voltage: 70 V

Allows for safe operation within a wide range of voltage levels, providing flexibility in circuit design and application use.

Transistor Element Material: SILICON

Ensures high performance, reliability, and temperature tolerance, making it suitable for demanding applications.

Maximum Collector Current (IC): 0.5 A

Offers sufficient current handling capacity for various applications, ensuring stable and efficient operation under different conditions.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides corrosion resistance and ensures reliable electrical connections, enhancing long-term performance and durability.

Nominal Transition Frequency (fT): 700 MHz

Offers high-frequency operation capability, suitable for applications requiring fast signal processing and high-speed switching.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SA1537D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

70 V

Configuration:

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1537D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20