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2SA1403D

Onsemi

2SA1403D by Onsemi

Onsemi's 2SA1403D is a PNP RF BJT with max. Vce of 60V and Ic of 0.5A. Ideal for switching applications, it has fT of 800MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 1,403 parts In-Stock

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Vyrian

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GES GmbH

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Corohmni

South Africa . 658 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Native Components

USA . 537 parts In-Stock

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Northwest PG Solutions

USA . 2,290 parts In-Stock

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Problanco Electronics

Mexico . 7,996 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 3,779 parts In-Stock

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SupplyDigital Components

Austria . 1,608 parts In-Stock

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Corphita

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UHIMA Technologies

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Overview

Unlock the power of seamless switching with the 2SA1403D by Onsemi. Crafted with precision and quality, this RF Power BJT transistor offers unparalleled performance and reliability for a wide range of applications. From amplifiers to signal processing, this PNP transistor is designed to deliver exceptional results. Experience the value and benefits of choosing Onsemi - where innovation meets excellence. Trust in the 2SA1403D to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good insulation properties and can effectively dissipate heat, making it a reliable choice for electronic components.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and are known for their high current gain and faster switching speeds, making them suitable for various electronic circuits.

Configuration: SINGLE

Single configuration transistors simplify circuit design and are easy to integrate into electronic systems, making them ideal for small to medium-sized applications.

Transistor Application: SWITCHING

Designed specifically for switching purposes, this transistor ensures efficient on/off transitions and reliable performance in switching applications.

Package Shape: RECTANGULAR

Rectangular package shapes offer easy mounting and alignment on PCBs, improving the overall efficiency of the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and mechanical stability, ensuring secure mounting and efficient heat dissipation for the transistor.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage rating, this transistor can handle relatively high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, with good thermal properties that enhance the overall efficiency and durability of the component.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating ensures reliable operation under various load conditions and enables the transistor to handle moderate to high current levels in the circuit.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish of Tin/Copper/Silver/Nickel provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections and long-term performance of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment during soldering, improving the overall reliability and quality of the connection.

Nominal Transition Frequency (fT): 800 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for applications that require fast switching speeds and high-frequency performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SA1403D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1403D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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