Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
SD1728E by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications, it features a plastic/epoxy package, flat terminals, and operates up to 200 °C. Suitable for surface mount with flange mount style packaging.
Median Price
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$1.726
$1.553
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$3.245
DigiPath Technology Company
Corphita
Parana Technologies
$2.064
Plastic/epoxy package material provides good insulation and protection for the transistor, ensuring its longevity and reliability.
NPN transistors are commonly used in amplifiers and other applications due to their higher current capability and faster switching speeds.
Single configuration simplifies circuit design and reduces complexity, making it easier to integrate this transistor into various applications.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.
Surface mount capability allows for easier and more efficient assembly onto circuit boards, saving space and reducing overall manufacturing costs.
Round package shape provides better thermal performance and allows for easy mounting onto heat sinks for improved heat dissipation.
Flat terminals offer easy and secure soldering connections, ensuring stable electrical contact and reliability in the circuit.
High frequency band allows for fast switching speeds and operation at higher frequencies, making it suitable for high-performance applications.
Having 4 terminals provides flexibility in circuit connections and allows for various configurations to be implemented.
Flange mount package style allows for secure mounting and easy integration into systems requiring stable and robust mechanical connections.
Operating at temperatures up to 200 °C ensures reliability and performance under high temperature conditions, making it suitable for demanding environments.
Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making it suitable for high-speed applications.
High collector-emitter voltage rating allows for operation in a wide range of voltage conditions, making it versatile and suitable for various applications.
Silicon material offers high performance, reliability, and efficiency in transistor operation, making it a preferred choice for various electronic applications.
High collector current capability allows for handling higher power levels, making it suitable for power amplification and high current applications.
Radial terminal position simplifies circuit board layout and allows for easier connections in radial configurations, improving overall circuit design.
RF Power Bipolar Junction Transistors (BJT) SD1728E attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
SD1728E Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N2222A
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
LM107H/883
Texas Instruments
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
SMBJ18CA
Onsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
1N4148
NXP Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32H753BIT6
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
1552200168
Molex
WIRE AND CABLE;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
STM32H743IIT6
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDLL4148
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
BAT54C-7-F
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
BLV75/12
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-CXFM-F6;
1075MP
Microsemi
1075MP by Microsemi is a NPN RF Power BJT with SINGLE configuration for AMPLIFIER applications. It operates in L BAND, has 4 terminals, and can handle up to 250W power dissipation. With a max operating temperature of 200°C, it features a collector-emitter voltage of 65V and collector current of 6.5A.
MAX2602ESA-T
Maxim Integrated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;
BLV33F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 133 W; Maximum Collector Current (IC): 12.5 A;
BLT50
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
RX1214B130YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; No. of Elements: 1; Terminal Position: DUAL;
MRF13750H
RF Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLS3135-10,114
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Highest Frequency Band: S BAND;
LLE16120XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLX94C
BLX94C by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates up to 750MHz, and supports a collector current of 2.5A. Ideal for ultra-high frequency circuits in demanding environments.
BDP950E6327/SN
Infineon Technologies
RF Power Bipolar Transistors;
BFG591TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
SD1893-03
SD1893-03 by STMicroelectronics is a NPN RF BJT with 15V VCEO, 4.4A IC, and 43W Ptot. Ideal for L Band applications, this transistor has a hFE of 15 and operates up to 200 °C. Package: Ceramic/Metal-Sealed Cofired, Single Configuration, Flange Mount style with Radial terminals.
MSC83305
STMicroelectronics' MSC83305 is a NPN RF BJT with 17.6W power dissipation, hFE of 30, and 0.7A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
BLP25M710
SD1455
SD1455 by STMicroelectronics is a NPN RF Power BJT with 140W power dissipation, suitable for amplifier applications in the VHF band. Featuring a max collector-emitter voltage of 35V and a max collector current of 8A, it operates at temperatures up to 175 °C.
SD1538-08
SD1538-08 by STMicroelectronics is a NPN RF BJT transistor with 11A IC, 583W Pd, and L Band frequency. Ideal for switching applications in high-power circuits due to its ceramic-metal package and flat terminals. Suitable for use in systems requiring high-frequency operation and efficient power dissipation up to 200 °C.
SD1728
SD1728 by STMicroelectronics is a NPN RF BJT transistor with 55V VCEO, 40A IC, and 330W Ptot. Ideal for high-frequency amplifier applications due to its single configuration and flat terminal form. Suitable for surface mount with a round package shape and radial terminal position.
BLV101B
BLV101B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 7.5 dB, operates at ultra-high frequencies, and supports a max collector current of 10 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
RZ2731B16W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;
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SD1726
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 18;
SD1727
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 10 A; Maximum Collector-Base Capacitance: 220 pF;
SD1727(THX15)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Highest Frequency Band: HIGH FREQUENCY BAND;
SD1728-15
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Terminal Position: RADIAL;
SD1728C
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Package Shape: ROUND; Package Body Material: PLASTIC/EPOXY;
SD1728D
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Terminals: 4; JESD-30 Code: O-PRFM-F4;
SD1728F
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
SD1729
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-PRFM-F4;
SD1729(TH416)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Form: FLAT;
SD1730
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel;
SD1730(TH560)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; No. of Terminals: 4;
SD1731
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified;
SD1731-14
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 257 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
SD1731(TH562)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL;
SD1732
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): .85 A; Maximum Collector-Emitter Voltage: 25 V;
SD1732(TDS595)
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2.6 A; Package Shape: RECTANGULAR; No. of Elements: 2;
SD1733
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Maximum Collector Current (IC): 3.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
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