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SD1726

STMicroelectronics

SD1726 by STMicroelectronics

SD1726 by STMicroelectronics is a NPN RF Power BJT with 4 terminals and 55V max collector-emitter voltage. It has a max power dissipation of 233W, making it suitable for high frequency band amplifier applications. With a max operating temp of 200°C, this transistor offers a single configuration in a round package shape for flange mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,787 parts In-Stock

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1,787

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Vyrian

USA . 1,407 parts In-Stock

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1,407

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Digiode

USA . 130 parts In-Stock

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130

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Nova Conductors

Japan . 87 parts In-Stock

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87

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IDEA Electronic Components Group

UK . 1,147 parts In-Stock

1+ parts

$1.733

100+ parts

-

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$1.560

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1,147

$1.733

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$1.560

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MKK Technologies

India . 136 parts In-Stock

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$3.259

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136

$3.259

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DigiPath Technology Company

USA . 136 parts In-Stock

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$3.259

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136

$3.259

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AZTECH Wire

Italy . 496 parts In-Stock

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$12.156

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496

$12.156

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Ampacity Inc.

Singapore . 554 parts In-Stock

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$39.050

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554

$39.050

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Semicontronic

India . 1,641 parts In-Stock

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$62.050

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$60.499

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$60.188

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1,641

$62.050

$60.499

$60.188

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QUARKTWIN TECHNOLOGY LTD

USA . 13,415 parts In-Stock

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13,415

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A-Z Elektronik GmbH

Germany . 4,565 parts In-Stock

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Bastille Electronics

Australia . 4,431 parts In-Stock

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Corphita

USA . 3,037 parts In-Stock

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3,037

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Parana Technologies

USA . 2,239 parts In-Stock

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$2.072

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2,239

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$2.072

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Continental Prestige Electronics

USA . 1,747 parts In-Stock

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Argo Parts USA

USA . 749 parts In-Stock

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749

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Perfect Parts

USA . 56 parts In-Stock

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56

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Overview

Experience the superior quality and reliability of the SD1726 RF Power BJT from STMicroelectronics. Designed for high frequency applications, this NPN transistor offers exceptional performance in amplifier circuits. With a maximum power dissipation of 233W and a maximum collector current of 20A, this transistor is a powerhouse in a compact flange mount package. Trust STMicroelectronics for cutting-edge technology and unmatched value in RF power transistors. Elevate your designs with the SD1726 and unlock new possibilities in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and offer high gain and low noise characteristics.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Allows for easy mounting and installation in circular configurations.

Terminal Form: FLAT

Facilitates easy soldering and connection to circuit boards.

Highest Frequency Band: HIGH FREQUENCY BAND

Suitable for applications requiring high frequency operation, such as radio frequency amplification.

No. of Terminals: 4

Provides multiple connection points for versatility in circuit integration.

Maximum Power Dissipation (Abs): 233 W

Handles high power levels effectively, ensuring reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and easy integration into various systems.

Minimum DC Current Gain (hFE): 18

Provides consistent and stable amplification of input signals.

Maximum Operating Temperature: 200 °C

Can operate reliably in high temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 220 pF

Helps in reducing feedback and improving stability in amplifier circuits.

Maximum Collector-Emitter Voltage: 55 V

Can handle relatively high voltage levels, suitable for various amplifier applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability in electronic circuits.

Maximum Collector Current (IC): 20 A

Capable of handling high current levels, making it suitable for power amplifier applications.

Terminal Position: RADIAL

Simplifies circuit layout and connection to other components.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1726 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

220 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

18

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1726 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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