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BLV101B

NXP Semiconductors

BLV101B by NXP Semiconductors

BLV101B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 7.5 dB, operates at ultra-high frequencies, and supports a max collector current of 10 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 3,848 parts In-Stock

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Digiode

USA . 1,719 parts In-Stock

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Anansix

USA . 712 parts In-Stock

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Zilex Electronics Inc.

Canada . 2 parts In-Stock

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Native Components

USA . 298 parts In-Stock

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$0.615

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Northwest PG Solutions

USA . 441 parts In-Stock

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$0.677

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One Stop Electronics

USA . 1,306 parts In-Stock

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$1.050

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Corphita

USA . 3,114 parts In-Stock

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UNI Independent Distributors

Spain . 2,453 parts In-Stock

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Kepictronics

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Overview

Elevate your RF applications with the BLV101B from NXP Semiconductors—a pinnacle of quality and reliability. Designed for optimal performance, this NPN transistor boasts impressive power gain and operates seamlessly in ultra-high frequency bands. Whether amplifying signals or enhancing communication systems, its robust ceramic and metal-sealed package ensures durability. Trust NXP’s legacy of excellence to power your innovations and achieve unparalleled efficiency in every project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust packaging ensures durability and reliability, making it ideal for high-performance applications in challenging environments.

Polarity or Channel Type: NPN

NPN transistors are suitable for a wide range of amplification scenarios, providing versatility in various electronic applications.

Configuration: SINGLE

A single configuration makes integration simpler in circuits where space and complexity need to be minimized.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers strong signal gain, enhancing overall system performance.

Surface Mount: YES

Surface mount capability allows for efficient use of board space and facilitates automated assembly processes.

Minimum Power Gain (Gp): 7.5 dB

A minimum power gain of 7.5 dB ensures effective signal amplification, making this transistor suitable for various RF applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes layout and space utilization on PCBs, contributing to overall design efficiency.

Terminal Form: FLAT

Flat terminals enhance thermal performance and facilitate better soldering for reliable connections in circuit assemblies.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band allows this transistor to be used in advanced communication systems and high-speed applications.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit design and enhances connectivity options for more complex functionalities.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure mounting options, ensuring stability and reliability in high-stress environments.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 supports efficient current amplification, leading to improved overall circuit performance.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can perform reliably in high-heat conditions.

Maximum Collector-Emitter Voltage: 27 V

The maximum collector-emitter voltage of 27 V allows for greater flexibility in circuit design, accommodating various voltage needs.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties, enhancing the performance and reliability of the transistor across applications.

Maximum Collector Current (IC): 10 A

A high collector current capacity of 10 A enables the transistor to handle significant loads, making it suitable for power-intensive applications.

Terminal Position: DUAL

Dual terminal position ensures enhanced connectivity and stability in circuit boards, leading to better signal integrity.

Case Connection: ISOLATED

Isolated case connection prevents unwanted coupling with other components, improving overall performance and reliability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV101B attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

27 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV101B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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