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2SC5390

Renesas Electronics

2SC5390 by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): 1.4 W; Maximum Collector Current (IC): .2 A;

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Native Components

USA . 514 parts In-Stock

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$123.913

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$118.956

514

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$118.956

Northwest PG Solutions

USA . 2,165 parts In-Stock

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$136.304

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2,165

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Kepictronics

USA . 44,000 parts In-Stock

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44,000

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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668

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC5390 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

110 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5390 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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