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SD1534-08

STMicroelectronics

SD1534-08 by STMicroelectronics

STMicroelectronics' SD1534-08 is an NPN BJT transistor for switching applications in L Band. With a max IC of 5.5A and Pmax of 219W, it operates up to 200 °C. This ceramic-metal sealed co-fired package has dual terminals and flat shape for surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,329 parts In-Stock

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4,329

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Vyrian

USA . 3,395 parts In-Stock

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3,395

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Anansix

USA . 2,541 parts In-Stock

1+ parts

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2,541

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Speed Components Ltd

Israel . 200 parts In-Stock

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200

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,017 parts In-Stock

1+ parts

$0.664

100+ parts

-

1k+ parts

$0.598

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1,017

$0.664

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$0.598

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MKK Technologies

India . 952 parts In-Stock

1+ parts

$1.249

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952

$1.249

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DigiPath Technology Company

USA . 952 parts In-Stock

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$1.249

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952

$1.249

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Corphita

USA . 3,411 parts In-Stock

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3,411

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Parana Technologies

USA . 2,048 parts In-Stock

1+ parts

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$0.794

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2,048

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$0.794

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Kepictronics

USA . 450 parts In-Stock

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450

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Overview

Enhance your electronic designs with the SD1534-08 from STMicroelectronics, a leading manufacturer known for high-quality RF Power Bipolar Junction Transistors. Ideal for switching applications in the L BAND frequency range, this NPN transistor offers a powerful 5.5 A maximum collector current and a robust 219 W power dissipation capability. With its ceramic and metal-sealed cofired package body material, this transistor ensures reliable performance in various environments. Trust STMicroelectronics to deliver top-notch components that provide value, efficiency, and innovation to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal conductivity and durability, ensuring optimal performance and long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely applicable.

Configuration: SINGLE

Simplified circuit design and ease of integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and compact PCB assembly, ideal for space-constrained applications.

Package Shape: SQUARE

Facilitates uniform heat dissipation and mechanical stability, contributing to the overall performance and reliability of the device.

Terminal Form: FLAT

Enables secure and efficient soldering, ensuring a reliable electrical connection in the circuit.

Highest Frequency Band: L BAND

Suited for applications within the L band frequency range, offering optimal performance in this specific frequency range.

Maximum Power Dissipation (Abs): 219 W

High power dissipation capability allows for handling substantial power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and secure attachment in systems, contributing to overall system reliability.

Minimum DC Current Gain (hFE): 10

Provides consistent and stable amplification characteristics, ensuring reliable performance in signal amplification applications.

Maximum Operating Temperature: 200 °C

Capable of operating at high temperatures without compromising performance, suitable for environments with elevated temperature conditions.

Transistor Element Material: SILICON

Silicon transistors offer higher performance and efficiency compared to other materials, ensuring superior device characteristics.

Maximum Collector Current (IC): 5.5 A

A high collector current rating allows for handling larger currents, making it suitable for applications requiring high current capabilities.

Terminal Position: DUAL

Dual terminal configuration provides flexibility in circuit design and layout, accommodating various connection requirements.

Case Connection: BASE

Base connection design enables efficient heat dissipation and ensures stable thermal performance, contributing to the overall reliability of the device.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1534-08 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1534-08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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