Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' SD1534-08 is an NPN BJT transistor for switching applications in L Band. With a max IC of 5.5A and Pmax of 219W, it operates up to 200 °C. This ceramic-metal sealed co-fired package has dual terminals and flat shape for surface mounting.
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Digiode
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Speed Components Ltd
IDEA Electronic Components Group
$0.664
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MKK Technologies
$1.249
DigiPath Technology Company
Corphita
Parana Technologies
$0.794
Assy Fe
Kepictronics
Provides excellent thermal conductivity and durability, ensuring optimal performance and long-term reliability.
NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely applicable.
Simplified circuit design and ease of integration into electronic systems.
Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.
Allows for easy and compact PCB assembly, ideal for space-constrained applications.
Facilitates uniform heat dissipation and mechanical stability, contributing to the overall performance and reliability of the device.
Enables secure and efficient soldering, ensuring a reliable electrical connection in the circuit.
Suited for applications within the L band frequency range, offering optimal performance in this specific frequency range.
High power dissipation capability allows for handling substantial power levels, making it suitable for demanding applications.
Enables easy mounting and secure attachment in systems, contributing to overall system reliability.
Provides consistent and stable amplification characteristics, ensuring reliable performance in signal amplification applications.
Capable of operating at high temperatures without compromising performance, suitable for environments with elevated temperature conditions.
Silicon transistors offer higher performance and efficiency compared to other materials, ensuring superior device characteristics.
A high collector current rating allows for handling larger currents, making it suitable for applications requiring high current capabilities.
Dual terminal configuration provides flexibility in circuit design and layout, accommodating various connection requirements.
Base connection design enables efficient heat dissipation and ensures stable thermal performance, contributing to the overall reliability of the device.
RF Power Bipolar Junction Transistors (BJT) SD1534-08 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Case Connection:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
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Transistor Application:
Transistor Element Material:
SD1534-08 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
BAV99
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N7002
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
Rectron
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
Plessey Semiconductors Discrete Components Div
Other Transistors;
USB3320C-EZK-TR
Microchip Technology
Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
DS18B20Z+T&R
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
ATMEGA328P-AU
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
BLU30/12
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 6 dB;
MX1011B700YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Terminal Position: DUAL; Transistor Element Material: SILICON;
MZ0912B50Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;
SD1390
STMicroelectronics
SD1390 by STMicroelectronics is an NPN RF BJT transistor with 4 terminals, suitable for ultra high frequency band applications. It has a max power dissipation of 8.33W and operates at temperatures up to 200 °C. With a transition frequency of 470MHz, it is ideal for amplifier circuits in various electronic devices.
BLY93C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
AM1011-300
STMicroelectronics' AM1011-300 is a NPN RF BJT with 1070W power dissipation, suitable for L Band applications. It has a max IC of 36A, hFE of 10, and operates up to 250 °C. The transistor is single-configured, surface-mountable, and features a ceramic-metal-sealed co-fired package.
BLW98
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 21.5 W; Maximum Collector Current (IC): 2 A;
AM80814-025
STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.
BLV30
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1150 MHz; Maximum Collector Current (IC): 1.5 A; Terminal Position: RADIAL;
BLV37
BLV37 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290W, operates at very high frequencies, and offers a min power gain of 10.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
5962F0721805V9A
Renesas Electronics
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Time At Peak Reflow Temperature (s): 30;
C3-28
Asi Semiconductor
C3-28 by Asi Semiconductor is a NPN RF BJT with 4 terminals, 10W power dissipation, and fT of 600MHz. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal package and silicon transistor element. Operates at max temp of 200°C in a single configuration with flat terminals.
933783040114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
PTB20074
Infineon Technologies
NPN; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F6; Transistor Element Material: SILICON; Qualification: Not Qualified;
LTE42008RTRAY
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND; Transistor Element Material: SILICON;
RZ3135B14W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;
1214-110M
Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.
BLV194
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
2SC2782
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Terminal Position: UNSPECIFIED;
AM81720-012
STMicroelectronics' AM81720-012 is an NPN RF BJT with 7.4 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 31.8W, operating up to 200 °C, and a DC current gain of at least 15 hFE.
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SD1528-06
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 87.5 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): DISK BUTTON;
SD1528-08
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 87.5 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
SD1530-01
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 87.5 W; Maximum Collector Current (IC): 2.6 A; Highest Frequency Band: L BAND;
SD1530-08
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 87.5 W; Maximum Collector Current (IC): 2.6 A; Qualification: Not Qualified;
SD1534-01
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 219 W; Maximum Collector Current (IC): 5.5 A; Minimum DC Current Gain (hFE): 10;
SD1538-02
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 11 A; Transistor Application: SWITCHING;
SD1538-08
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 11 A; Qualification: Not Qualified;
SD1540
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Qualification: Not Qualified; JESD-30 Code: S-PDFM-F2;
SD1540-08
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 875 W; Maximum Collector Current (IC): 22 A; Minimum DC Current Gain (hFE): 10;
SD1541-01
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1460 W; Maximum Collector Current (IC): 22 A; Package Shape: RECTANGULAR;
SD1541-09
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1460 W; Maximum Collector Current (IC): 22 A; Case Connection: BASE;
SD1542
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified;
SD1542-04
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1350 W; Maximum Collector Current (IC): 40 A; Terminal Form: FLAT;
SD1542-42
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Maximum Collector Current (IC): 45 A; Transistor Application: SWITCHING;
SD1563
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 875 W; Maximum Collector Current (IC): 21.6 A; No. of Elements: 1;
SD1565
NPN; Configuration: COMMON BASE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 43.2 A; Transistor Application: SWITCHING;
SD1537-2
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;
SD1534-08
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 218 W; Maximum Collector Current (IC): 5.5 A; Transistor Application: SWITCHING;
SD1536-08
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1025 MHz; Maximum Power Dissipation (Abs): 292 W; Maximum Collector Current (IC): 10 A;
SD1536-8
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 292 W; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;
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