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SD1565

STMicroelectronics

SD1565 by STMicroelectronics

SD1565 by STMicroelectronics is an NPN RF BJT transistor with 2 elements, ideal for ultra-high frequency band applications. It has a max power dissipation of 1100W and can handle a collector current of 43.2A. The package is ceramic-metal-sealed co-fired, suitable for flange mount installations at temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,693 parts In-Stock

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4,693

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Digiode

USA . 4,000 parts In-Stock

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4,000

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Anansix

USA . 1,334 parts In-Stock

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1,334

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,093 parts In-Stock

1+ parts

$1.421

100+ parts

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1k+ parts

$1.279

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1,093

$1.421

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$1.279

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MKK Technologies

India . 422 parts In-Stock

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$2.673

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422

$2.673

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DigiPath Technology Company

USA . 422 parts In-Stock

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$2.673

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422

$2.673

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Corphita

USA . 4,129 parts In-Stock

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4,129

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Parana Technologies

USA . 763 parts In-Stock

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$1.700

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763

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$1.700

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Overview

Upgrade your RF power switching applications with the SD1565 from STMicroelectronics. This high-quality NPN transistor offers reliable performance in ultra-high frequency bands, making it ideal for a wide range of applications. With a maximum power dissipation of 1100W and a maximum collector current of 43.2A, this transistor provides exceptional value and efficiency for your projects. Trust STMicroelectronics for top-notch components that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent thermal conductivity and high temperature resistance, ensuring reliability in demanding applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs and enhances compatibility with commonly used components.

Configuration: COMMON BASE, 2 ELEMENTS

The common base configuration with 2 elements offers versatile performance capabilities, suitable for various switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor ensures efficient and reliable operation in high-speed switching circuits.

Surface Mount: YES

The surface mount capability allows for easy and space-efficient PCB assembly, ideal for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient use of PCB space and allows for easier placement and soldering during assembly.

Terminal Form: FLAT

The flat terminal form simplifies connections and ensures secure mounting on the circuit board for stable operation.

No. of Elements: 2

Having 2 elements within the transistor enhances its performance capabilities and enables more versatile applications.

Maximum Power Dissipation (Abs): 1100 W

With a high maximum power dissipation capacity, this transistor can handle significant power loads without compromising performance.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance of 175 °C ensures reliable operation even in high-temperature environments.

Maximum Collector Current (IC): 43.2 A

The high maximum collector current rating allows for handling substantial current loads, making it suitable for power switching applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1565 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1565 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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