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SD1541-09

STMicroelectronics

SD1541-09 by STMicroelectronics

SD1541-09 by STMicroelectronics is a NPN RF BJT transistor with 65V VCE, 22A IC, and 1460W Ptot. Ideal for L Band applications, it's a single configuration switch transistor in a ceramic-metal package suitable for high-power switching operations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,786 parts In-Stock

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Digiode

USA . 898 parts In-Stock

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898

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Anansix

USA . 94 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 468 parts In-Stock

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$1.558

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$1.402

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468

$1.558

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$1.402

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MKK Technologies

India . 2,221 parts In-Stock

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$2.929

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$2.929

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DigiPath Technology Company

USA . 2,221 parts In-Stock

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$2.929

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$2.929

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Corphita

USA . 2,290 parts In-Stock

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2,290

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Parana Technologies

USA . 1,621 parts In-Stock

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$1.862

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1,621

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$1.862

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Overview

Unleash the power of STMicroelectronics' SD1541-09 RF Power BJT! With a reputation for excellence in semiconductor manufacturing, STMicroelectronics delivers top-notch quality and reliability in every product. Ideal for switching applications in the L band frequency range, this NPN transistor offers unmatched performance and durability. Experience the superior benefits of the SD1541-09, from its high power dissipation capabilities to its wide operating temperature range. Trust STMicroelectronics to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides good thermal conductivity and ensures reliable operation of the transistor even under high power dissipation.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile in various circuit designs.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration, making it easier to implement in a variety of electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in high-frequency switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, suitable for applications where space is limited.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and integration into existing circuit layouts, providing flexibility in design.

Maximum Power Dissipation (Abs): 1460 W

High power dissipation capability allows for operation in demanding applications where high power levels are required.

Maximum Collector Current (IC): 22 A

With a high collector current rating, this transistor can handle large current loads, making it suitable for high-power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1541-09 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1541-09 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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