Loading...

SD1534-01

STMicroelectronics

SD1534-01 by STMicroelectronics

STMicroelectronics' SD1534-01 is an NPN RF BJT transistor with 5.5A IC, 219W Pd, and L Band frequency range. Ideal for amplifier applications, it comes in a plastic/epoxy package with flat terminals and operates up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,291

-

-

-

-

Anansix

USA . 1,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,516

-

-

-

-

Digiode

USA . 748 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

748

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,158 parts In-Stock

1+ parts

$0.354

100+ parts

-

1k+ parts

$0.319

10k+ parts

-

1,158

$0.354

-

$0.319

-

MKK Technologies

India . 259 parts In-Stock

1+ parts

$0.666

100+ parts

-

1k+ parts

-

10k+ parts

-

259

$0.666

-

-

-

DigiPath Technology Company

USA . 259 parts In-Stock

1+ parts

$0.666

100+ parts

-

1k+ parts

-

10k+ parts

-

259

$0.666

-

-

-

Parana Technologies

USA . 1,597 parts In-Stock

1+ parts

-

100+ parts

$0.424

1k+ parts

-

10k+ parts

-

1,597

-

$0.424

-

-

Corphita

USA . 456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

456

-

-

-

-

Overview

Elevate your amplifier performance with the high-quality SD1534-01 RF Power Bipolar Junction Transistor from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-notch products that meet the highest standards. Ideal for L band applications, this NPN transistor offers exceptional power dissipation and current gain, ensuring optimal performance. With its surface mount capability and round package shape, the SD1534-01 is versatile and easy to integrate into various designs. Experience the value and benefits of reliable amplification with this cutting-edge transistor from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering reliable performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and simplifying assembly.

Package Shape: ROUND

Enables efficient heat dissipation and compact design, suitable for space-constrained applications.

Terminal Form: FLAT

Facilitates easy soldering and connection, making it convenient for assembly and maintenance.

Highest Frequency Band: L BAND

Suited for high-frequency applications in the L band, offering reliable performance in communication systems.

No. of Terminals: 4

Provides necessary connections for operation, ensuring proper functionality in the circuit.

Maximum Power Dissipation (Abs): 219 W

With a high power dissipation rating, it can handle large power levels without overheating, ensuring long-term reliability.

Package Style (Meter): DISK BUTTON

Unique package style that distinguishes it from other transistors, suitable for specialized applications.

Minimum DC Current Gain (hFE): 10

Provides consistent amplification of input signals, ensuring stability and reliability in amplification circuits.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures without performance degradation, suitable for industrial or high-temperature environments.

Transistor Element Material: SILICON

Silicon-based construction offers high performance and reliability, ideal for demanding applications.

Maximum Collector Current (IC): 5.5 A

With a high collector current rating, it can handle large currents, making it suitable for power applications.

Terminal Position: RADIAL

Allows for easy integration into radial circuit layouts, facilitating efficient circuit design.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1534-01 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

O-PRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1534-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20