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SD1540

STMicroelectronics

SD1540 by STMicroelectronics

STMicroelectronics' SD1540 is an NPN RF Power BJT with 22A IC, ideal for L Band applications. It features a plastic/epoxy package, single configuration, and flat terminal form. Suitable for switching purposes, it operates at up to 175 °C with a flange mount style.

Median Price

$1,122.280

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1 parts In-Stock

1+ parts

$1,122.280

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$1,122.280

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,114 parts In-Stock

1+ parts

$1,135.810

100+ parts

-

1k+ parts

-

10k+ parts

-

3,114

$1,135.810

-

-

-

Vyrian

USA . 5,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,006

-

-

-

-

Anansix

USA . 2,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,006

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,292 parts In-Stock

1+ parts

$0.512

100+ parts

-

1k+ parts

$0.461

10k+ parts

-

1,292

$0.512

-

$0.461

-

MKK Technologies

India . 2,216 parts In-Stock

1+ parts

$0.964

100+ parts

-

1k+ parts

-

10k+ parts

-

2,216

$0.964

-

-

-

DigiPath Technology Company

USA . 2,216 parts In-Stock

1+ parts

$0.964

100+ parts

-

1k+ parts

-

10k+ parts

-

2,216

$0.964

-

-

-

Corphita

USA . 4,171 parts In-Stock

1+ parts

$1,076.031

100+ parts

-

1k+ parts

-

10k+ parts

-

4,171

$1,076.031

-

-

-

Parana Technologies

USA . 1,009 parts In-Stock

1+ parts

-

100+ parts

$0.613

1k+ parts

-

10k+ parts

-

1,009

-

$0.613

-

-

Overview

Experience unmatched performance and reliability with the SD1540 RF Power BJT by STMicroelectronics. Known for its superior quality and innovative technology, this single NPN transistor is perfect for switching applications in the L Band frequency range. With a maximum collector current of 22A and a maximum operating temperature of 175 °C, this transistor offers unparalleled value and efficiency to customers looking for high-quality components. Trust STMicroelectronics to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide a cost-effective and lightweight option for the package, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, providing good amplification and switching capabilities.

Configuration: SINGLE

Single configuration transistors are easier to manage and handle in circuit design, making this product user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficiency in switching circuits.

Surface Mount: YES

Surface mount capability allows for easier and more efficient assembly on circuit boards, saving space and reducing manufacturing costs.

Package Shape: SQUARE

Square package shape provides a compact design, making it easier to integrate into circuit layouts with limited space.

Terminal Form: FLAT

Flat terminals provide a stable and secure connection, ensuring reliable performance in various operating conditions.

Highest Frequency Band: L BAND

Designed for operation in the L band frequency range, making it suitable for a wide range of wireless communication applications.

No. of Terminals: 2

Having only 2 terminals simplifies circuit connections, making it easier to integrate into circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and secure mounting on heat sinks or other components, ensuring efficient heat dissipation.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this transistor can withstand high temperatures, ensuring reliable performance in different environments.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability, making this transistor a durable and long-lasting choice for various applications.

Maximum Collector Current (IC): 22 A

With a high maximum collector current rating of 22A, this transistor can handle higher current loads, making it suitable for applications requiring higher power levels.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible connections in circuit designs, providing versatility in various applications.

Case Connection: BASE

Base case connection provides a stable grounding point, ensuring proper functionality and performance of the transistor in circuit applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1540 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

S-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1540 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-318-5164, 5961013185164

NIIN

013185164

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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