Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLV948 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 320W, operates in the UHF band, and offers a min power gain of 6.5 dB. Its robust ceramic-metal package ensures reliability in demanding environments.
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The use of ceramic and metal-sealed co-fired materials ensures excellent thermal management and durability, making the product reliable in high-power applications.
As an NPN transistor, this product is suitable for a variety of switching and amplification applications, providing efficient performance in electronic circuits.
The common emitter configuration allows for high voltage gain and makes it ideal for amplification tasks, providing versatility in signal processing.
Designed specifically for amplification, this transistor can enhance signal strength, which is essential in radio frequency applications.
Surface mount capability facilitates compact PCB design and automated assembly processes, saving space in electronic devices.
A minimum power gain of 6.5 dB ensures sufficient amplification for various applications, contributing to improved overall circuit performance.
The rectangular package shape optimizes space on the PCB and enhances thermal dissipation, supporting efficient circuit design and thermal management.
Flat terminals allow for ease of installation and better contact with the PCB, ensuring reliable electrical connections.
Operating in the UHF band makes this transistor ideal for wireless communications and high-frequency applications, meeting demanding specifications.
Having two elements allows for increased performance and functionality, effectively supporting diverse amplification and switching needs.
The provision of four terminals facilitates easy integration and flexibility in circuit design for various applications.
Flange mount style provides robust mechanical support, enabling secure placement in systems that require stability during operation.
With a high maximum power dissipation rating of 320 W, this transistor can handle significant power loads, making it suitable for demanding applications.
A minimum hFE of 30 ensures adequate current amplification, crucial for effective signal processing in various electronics.
The ability to operate at up to 200 °C enhances reliability and durability in high-temperature environments, essential for industrial applications.
Low collector-base capacitance of 90 pF minimizes switching losses, promoting efficient operation in high-frequency applications.
With a maximum collector-emitter voltage of 28 V, this transistor is versatile enough to be used in various voltage-sensitive applications.
Silicon material ensures reliable performance and thermal stability, providing a benchmark in semiconductor fabrication for versatile applications.
A maximum collector current of 12.5 A supports powerful circuit designs, accommodating high current applications without risk of failure.
Dual terminal position facilitates a symmetrical layout in circuits, promoting ease of use and flexibility during installation.
Emitter connection at the case level enhances thermal management, allowing for efficient heat dissipation and improved device longevity.
RF Power Bipolar Junction Transistors (BJT) BLV948 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BLV948 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Rectron
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Onsemi
MBR0540T1G
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
2N2222A
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
NE555D
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR0530T1G
MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.
Changzhou Starsea Electronics
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
LM107H/883C
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
Won-top Electronics
MSC82306
STMicroelectronics
STMicroelectronics' MSC82306 is a NPN RF BJT with 16.7W power dissipation, suitable for S Band applications like amplifiers. Featuring a max collector current of 0.9A and operating temperature up to 200 °C, it has a min DC current gain of 30 and a ceramic-metal-sealed co-fired package body material.
BLT52-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
MRF422
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL; Highest Frequency Band: HIGH FREQUENCY BAND;
MRF13750HR5
RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLW89
BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.
AM82731-025
STMicroelectronics' AM82731-025 is a NPN BJT transistor for switching applications. It offers a min power gain of 6.2 dB, max power dissipation of 100 W, and operates in the S Band frequency range. The transistor has a single configuration with a flange mount package suitable for high-power RF applications.
NE69039FB
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; No. of Terminals: 4; Maximum Collector-Emitter Voltage: 6 V;
BFQ290
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A;
LLE16045X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 8.5 dB;
MX0912B351YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;
5962F0721803V9A
RF Power Bipolar Transistors; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Gold (Au); Peak Reflow Temperature (C): 260; Qualification: Qualified;
BLT52
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Minimum Power Gain (Gp): 8 dB; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLV33F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 133 W; Maximum Collector Current (IC): 12.5 A;
RXB12350Y
NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; No. of Terminals: 2;
BLW32
The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.
5962F0721804VXC
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;
BLU60/12
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
2N3375
2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.
LTE1015T
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .2 A; No. of Terminals: 2; Terminal Position: RADIAL;
AM1416-220
STMicroelectronics AM1416-220 is an NPN RF BJT transistor for amplifier applications. It operates in L Band with a highest frequency band. The package is ceramic-metal-sealed cofired, surface mountable, and has 2 terminals in a rectangular shape suitable for flange mounting.
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BLV946
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;
BLV92
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
BLV909
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
BLV945A
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV93
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
BLV910
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
BLV947
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 1.65 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
BLV904
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;
BLV920
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
BLV94
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;
BLV934
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
BLV91
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
BLV945B
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
BLV91/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;
BLV90
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV904-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Minimum Power Gain (Gp): 11 dB;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BLV935
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
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