Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' MSC82005 is a NPN RF BJT with 29W power dissipation, ideal for L Band amplification. Featuring a ceramic-metal package, it has hFE of 15 and IC of 1A, suitable for high-frequency applications up to 200 °C.
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This material provides excellent thermal conductivity and durability, ensuring reliable performance in high-power applications.
NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.
The single configuration simplifies circuit design and integration, making it easier to use in various applications.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.
The round shape allows for better heat dissipation and easier mounting in applications where space is limited.
With a high maximum power dissipation, this transistor can handle high-power operations without overheating or risking damage.
A minimum DC current gain of 15 ensures consistent and reliable amplification performance in various operating conditions.
Capable of operating at temperatures up to 200 °C, making it suitable for high-temperature environments.
Low collector-base capacitance allows for faster switching speeds and better high-frequency performance in amplifier circuits.
The high maximum collector current rating of 1 A makes this transistor suitable for high-power applications requiring high current handling capabilities.
RF Power Bipolar Junction Transistors (BJT) MSC82005 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Case Connection:
Maximum Collector Current (IC):
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Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
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No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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Transistor Application:
Transistor Element Material:
MSC82005 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-302-4131, 5961013024131
NIIN
013024131
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
LM358AN
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
STM32F401CDY6TR
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
LL4148
Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0540T1G
Onsemi
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
MMBT3904LT1G
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
EEAGA1H4R7
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
1N4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BLU99/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; Minimum Power Gain (Gp): 10.5 dB;
BLS3135-65TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: S BAND; Case Connection: BASE;
AM1011-400
STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
MRF454
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LV1721E50R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
MSC81325M
MSC81325M by STMicroelectronics is a NPN RF Power BJT with 24A IC, 880W power dissipation, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package body, single configuration, and flat terminal form. Operating at up to 200 °C, this transistor offers a min hFE of 15 and radial terminal position.
SD1391
SD1391 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 29W, max collector-emitter voltage of 25V, and operates up to 200 °C. With a transition frequency of 470MHz and flat terminal form, it's ideal for high-frequency amplification needs.
5962F0721801VXC
Renesas Electronics
RF Power Bipolar Transistors; JESD-609 Code: e4; Qualification: Qualified; Terminal Finish: GOLD;
SD1274
SD1274 by STMicroelectronics is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for amplifier applications in the very high frequency band, it has a single configuration and flat terminals in a round package.
LFE18500X
LFE18500X by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 120W, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band frequency use in compact designs.
BLV91/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;
ISL73128EHVF
PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;
2N6080
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 18 V;
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Additional Features: HIGH RELIABILITY;
RF3L05150CB4
RF Power Bipolar Transistors;
SD1449
SD1449 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 19.4W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
934021700114
NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;
AM1011-500
STMicroelectronics' AM1011-500 is a NPN RF Power BJT with 1360W power dissipation, ideal for L Band amplification. Featuring a max IC of 27A and hFE of 10, this transistor is surface-mountable and operates up to 250 °C, making it suitable for high-power applications.
2SC3006
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
BLV2045N
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;
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MSC82307
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.4 W; Maximum Collector Current (IC): 1.2 A; Terminal Form: FLAT;
MSC81350M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 720 W; Maximum Collector Current (IC): 19.8 A; Case Connection: BASE;
MSC81035M
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND;
MSC82304
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.5 W; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
MSC81450M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 910 W; Maximum Collector Current (IC): 28 A; Package Shape: RECTANGULAR;
MSC81250M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 17.8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC83303
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .54 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC81005
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18.8 W; Maximum Collector Current (IC): .6 A; Package Shape: ROUND;
MSC81400M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 28 A; Case Connection: BASE;
MSC81035MP
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Terminal Position: RADIAL;
MSC82010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 15;
MSC82003
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC81111
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC82306
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .9 A; Transistor Element Material: SILICON;
MSC81020
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 24 A; Highest Frequency Band: L BAND;
MSC80197
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .7 A; No. of Terminals: 2;
MSC81010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT;
MSC81058
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER;
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