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AM80912-015

STMicroelectronics

AM80912-015 by STMicroelectronics

STMicroelectronics AM80912-015 is an NPN BJT transistor for switching applications. It offers a min power gain of 8.1 dB and can handle up to 50W power dissipation. Ideal for L Band frequencies, this transistor has a max collector current of 1.8A and operates at temperatures up to 250 °C.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 1,548 parts In-Stock

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Anansix

USA . 758 parts In-Stock

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Digiode

USA . 745 parts In-Stock

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Native Components

USA . 807 parts In-Stock

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$1.437

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Northwest PG Solutions

USA . 1,577 parts In-Stock

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$1.580

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IDEA Electronic Components Group

UK . 1,178 parts In-Stock

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$1.621

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$1.459

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MKK Technologies

India . 1,950 parts In-Stock

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$3.048

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$3.048

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DigiPath Technology Company

USA . 1,950 parts In-Stock

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$3.048

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Corphita

USA . 3,931 parts In-Stock

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Parana Technologies

USA . 435 parts In-Stock

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$1.938

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Overview

Unleash the power of advanced technology with the AM80912-015 RF Power Bipolar Junction Transistor by STMicroelectronics. Crafted with precision and expertise, this NPN transistor is designed for switching applications in the L Band frequency range. With a high minimum power gain of 8.1 dB and a maximum power dissipation of 50W, this transistor offers unparalleled performance and reliability. Whether you're looking to enhance your communication systems or improve your electronic devices, the AM80912-015 delivers exceptional value and efficiency. Upgrade to excellence today with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures high durability and heat resistance, making this product suitable for high temperature environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, offering stable and reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and offers ease of integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast operation.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving space and improving assembly efficiency.

Minimum Power Gain (Gp): 8.1 dB

With a minimum power gain of 8.1 dB, this transistor provides amplification for signals, improving overall performance.

Package Shape: SQUARE

The square package shape offers mechanical stability and ease of mounting in PCB layouts.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering, ensuring reliable electrical contact.

Highest Frequency Band: L BAND

Designed for operation in the L band frequency range, suitable for various communication and RF applications.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to connect and integrates well within circuit designs.

Maximum Power Dissipation (Abs): 50 W

With a maximum power dissipation of 50W, this transistor can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and thermal management, enhancing overall performance and reliability.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor can provide sufficient amplification for various applications.

Maximum Operating Temperature: 250 °C

Designed to operate at a maximum temperature of 250 °C, making it suitable for high temperature environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic devices.

Maximum Collector Current (IC): 1.8 A

With a maximum collector current of 1.8A, this transistor can handle moderate current levels, suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit configurations and connections, enhancing versatility.

Case Connection: BASE

The case connection at the base provides a stable grounding point, ensuring proper functionality and reducing noise interference.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM80912-015 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

8.1 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM80912-015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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