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AM80814-025

STMicroelectronics

AM80814-025 by STMicroelectronics

STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,914 parts In-Stock

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3,914

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Anansix

USA . 1,094 parts In-Stock

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1,094

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Vyrian

USA . 998 parts In-Stock

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998

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IDEA Electronic Components Group

UK . 1,558 parts In-Stock

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$0.428

100+ parts

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$0.385

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1,558

$0.428

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$0.385

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MKK Technologies

India . 1,249 parts In-Stock

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$0.804

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1,249

$0.804

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DigiPath Technology Company

USA . 1,249 parts In-Stock

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$0.804

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1,249

$0.804

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Corphita

USA . 2,182 parts In-Stock

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2,182

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Parana Technologies

USA . 227 parts In-Stock

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$0.512

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227

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$0.512

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Native Components

USA . 173 parts In-Stock

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173

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Northwest PG Solutions

USA . 30 parts In-Stock

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30

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Overview

Experience high-quality performance and reliability with the AM80814-025 from STMicroelectronics, a leading manufacturer in RF Power Bipolar Junction Transistors. Ideal for switching applications in the L Band frequency range, this NPN transistor offers a minimum power gain of 7 dB and maximum power dissipation of 75 W. With a single configuration and surface mount capability, this product provides customers with seamless integration and efficient operation. Enhance your electronic designs with the value and benefits of the AM80814-025, delivering superior performance and versatility for a wide range of applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material provides excellent temperature and chemical resistance, making this transistor suitable for a wide range of operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption, ideal for efficient signal control.

Surface Mount: YES

Being surface mountable allows for easier and more efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, this transistor provides good signal amplification capabilities, ensuring reliable performance in amplification circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and handling, enhancing the overall usability of the transistor in different applications.

Terminal Form: FLAT

The flat terminal form simplifies soldering and connections, ensuring a secure and reliable electrical connection in the circuit.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for applications requiring high-frequency performance, such as communication systems.

No. of Terminals: 2

Having 2 terminals simplifies circuit connections and reduces complexity, making it easier to integrate the transistor into various electronic designs.

Maximum Power Dissipation (Abs): 75 W

With a maximum power dissipation of 75 W, this transistor can handle high-power applications, ensuring reliable performance under heavy load conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and heat dissipation, making it suitable for high-power applications where thermal management is critical.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor offers consistent amplification of input signals, ensuring stable and predictable operation in amplification circuits.

Maximum Operating Temperature: 250 °C

Operating at a maximum temperature of 250 °C, this transistor can withstand high-temperature environments, making it suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for various electronic applications requiring precision and consistency.

Maximum Collector Current (IC): 3.5 A

With a maximum collector current of 3.5 A, this transistor can handle high current loads, making it suitable for power switching and control applications.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in circuit connections, allowing for different mounting orientations and configurations as needed in the application.

Case Connection: BASE

The base case connection ensures proper grounding and thermal management, improving the overall reliability and performance of the transistor in various circuit designs.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM80814-025 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM80814-025 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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