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BLX68

NXP Semiconductors

BLX68 by NXP Semiconductors

BLX68 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 5.4 dB, operates at ultra-high frequencies, and withstands temperatures up to 150 °C. Its flat, round package ensures efficient performance in compact designs.

Median Price

$67.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 525 parts In-Stock

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$67.000

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Vyrian

USA . 365 parts In-Stock

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ComSIT Distribution GmbH

Germany . 350 parts In-Stock

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350

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Anansix

USA . 294 parts In-Stock

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Digiode

USA . 124 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 16 parts In-Stock

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Manotoh

Italy . 11 parts In-Stock

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Huijzer Components

Netherlands . 4 parts In-Stock

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GES GmbH

Germany . 2 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Sinequanon

UK . 1 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 362 parts In-Stock

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$2.050

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Northwest PG Solutions

USA . 1,550 parts In-Stock

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$2.255

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One Stop Electronics

USA . 852 parts In-Stock

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$61.050

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UNI Independent Distributors

Spain . 5,657 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,188 parts In-Stock

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Assy Fe

Spain . 450 parts In-Stock

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Overview

Elevate your designs with the BLX68 from NXP Semiconductors, a leader in innovative technology. This high-performance RF Power BJT excels in various applications, delivering exceptional amplification in ultra-high frequency ranges. Built with durability in mind, its robust plastic/epoxy construction ensures reliability under demanding conditions. Choose BLX68 for superior power gain, efficiency, and the trusted quality that only NXP can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification due to their superior performance characteristics, ensuring efficiency in signal amplification.

Configuration: SINGLE

A single transistor configuration simplifies circuit design, making it easier to integrate into various electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for applications requiring signal boosting, thus improving overall system performance.

Minimum Power Gain (Gp): 5.4 dB

A minimum power gain of 5.4 dB ensures effective signal amplification, making it suitable for high-performance audio and communication applications.

Package Shape: ROUND

The round package shape can enhance thermal performance and mechanical stability in various mounting situations.

Terminal Form: FLAT

Flat terminals ensure easier and more secure mounting, which can be advantageous in tight PCB layouts and ensures good electrical contact.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band allows this transistor to function effectively in applications such as RF communication systems, enabling higher data throughput.

No. of Terminals: 4

With four terminals, the transistor provides flexibility in circuit design and allows for versatile connections for both input and output.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style offers robust mechanical support and is suitable for applications with demanding physical and thermal conditions.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance in demanding environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 18 V

With a maximum collector-emitter voltage of 18 V, this transistor can safely operate in mid-voltage applications, expanding its usability in various circuits.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors, providing good thermal stability and electrical performance, which contributes to overall reliability.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A provides sufficient current handling capabilities for most amplification tasks, making it flexible for various applications.

Terminal Position: RADIAL

Radial terminal positioning aids in circuit board assembly and reduces the risk of misalignment during installation, ensuring better performance.

Case Connection: ISOLATED

An isolated case connection prevents electrical interference with other components, improving reliability and performance in sensitive applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLX68 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

5.4 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLX68 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-030-9246, 5961990309246

NIIN

990309246

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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