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BLX69A

NXP Semiconductors

BLX69A by NXP Semiconductors

BLX69A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3.5 A, operates up to 200 °C, and achieves a min power gain of 4 dB in the ultra-high frequency band. Its round, flat package ensures efficient thermal management.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 2,887 parts In-Stock

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Digiode

USA . 2,328 parts In-Stock

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Anansix

USA . 516 parts In-Stock

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516

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ComSIT Distribution GmbH

Germany . 104 parts In-Stock

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Connector Distribution Corp

USA . 10 parts In-Stock

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Right Parts Inc.

USA . 10 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 9 parts In-Stock

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Native Components

USA . 833 parts In-Stock

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$16.005

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833

$16.005

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Northwest PG Solutions

USA . 2,054 parts In-Stock

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$17.605

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$15.845

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One Stop Electronics

USA . 376 parts In-Stock

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$32.050

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UNI Independent Distributors

Spain . 7,301 parts In-Stock

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Corphita

USA . 2,737 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Overview

Elevate your RF applications with the BLX69A from NXP Semiconductors, a trusted leader in semiconductor innovation. This high-quality NPN transistor excels in AMPLIFIER applications, ensuring superior performance in ultra-high frequency bands. With its robust design and exceptional power gain, the BLX69A delivers reliable efficiency, facilitating seamless connectivity for various devices. Experience unmatched value and reliability that empowers your projects to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and resistance against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration provides efficient switching capabilities, making this transistor ideal for amplification and signal processing applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces space, making it a practical choice for compact electronic systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor ensures high performance in boosting signal strength.

Minimum Power Gain (Gp): 4 dB

With a minimum power gain of 4 dB, this transistor enhances signal levels effectively, making it suitable for RF applications.

Package Shape: ROUND

The round package shape aids in heat dissipation and facilitates installation in various types of circuitry.

Terminal Form: FLAT

Flat terminals allow for easy soldering and integration onto PCBs, enhancing compatibility with existing designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band, this transistor ensures high-speed performance for advanced RF applications.

No. of Terminals: 4

Four terminals provide flexibility in circuit design and facilitate easier connections in multi-terminal configurations.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style allows for secure attachment and enhances stability in various mounting environments.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C ensures reliability and performance in extreme conditions.

Maximum Collector-Emitter Voltage: 18 V

A collector-emitter voltage rating of 18 V provides robustness for applications requiring moderate voltage handling.

Transistor Element Material: SILICON

Silicon as the element material delivers excellent electrical properties along with thermal stability.

Maximum Collector Current (IC): 3.5 A

A maximum collector current of 3.5 A supports substantial load handling capacity, making this transistor suitable for power applications.

Terminal Position: RADIAL

Radial terminal positioning enhances ease of installation and aligns well with various circuit board designs.

Case Connection: ISOLATED

Isolated case connection helps maintain signal integrity and reduces the risk of interference with other components.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLX69A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

4 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLX69A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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