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BLW96

NXP Semiconductors

BLW96 by NXP Semiconductors

The NXP Semiconductors BLW96 is a single NPN RF Power BJT with 4 terminals, operating in the very high frequency band up to 245 MHz. It features a max power dissipation of 340 W and can handle a collector current of up to 12 A. Ideal for amplifier applications, this transistor has a collector-emitter voltage of 55 V and operates at temperatures up to 200°C.

Median Price

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Lifecycle Status

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RFMW

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Anansix

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Nova Conductors

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Pride Electronics

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LittleDiode

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 192 parts In-Stock

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Spain . 5,627 parts In-Stock

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Continental Prestige Electronics

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Glotronic Ltd.

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Argo Parts USA

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Overview

Unleash the power of RF technology with the BLW96 by NXP Semiconductors. This top-of-the-line RF Power BJT transistor is designed for high-frequency applications, offering unmatched performance and reliability. Whether you're amplifying signals or boosting power, this transistor delivers exceptional results. With its durable ceramic and metal-sealed package, the BLW96 ensures longevity and stability in any environment. Trust NXP Semiconductors, a leader in semiconductor manufacturing, to provide you with cutting-edge technology that meets your needs. Elevate your projects with the BLW96 and experience the difference it can make in your RF applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal and electrical insulation, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and offer good performance characteristics for such applications.

Maximum Power Dissipation (Abs): 340 W

With a high power dissipation rating, this RF power BJT can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 55 V

The high collector-emitter voltage rating allows for reliable operation in circuits where higher voltages may be present.

Maximum Collector Current (IC): 12 A

The high collector current rating enables this transistor to handle large currents, making it suitable for high-power amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW96 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW96 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-446-3021, 5961144463021, 5961-99-773-9053, 5961997739053

NIIN

144463021, 997739053

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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