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BLW91

NXP Semiconductors

BLW91 by NXP Semiconductors

BLW91 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 30 W, operates up to 1 GHz, and supports a collector current of 1.5 A. Its robust ceramic-metal sealed package ensures reliability in ultra-high frequency environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,400 parts In-Stock

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3,400

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Anansix

USA . 2,294 parts In-Stock

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2,294

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ComSIT Distribution GmbH

Germany . 215 parts In-Stock

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215

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Vyrian

USA . 211 parts In-Stock

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211

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One Stop Electronics

USA . 1,002 parts In-Stock

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$1.050

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1,002

$1.050

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Native Components

USA . 690 parts In-Stock

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$13.363

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690

$13.363

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Northwest PG Solutions

USA . 146 parts In-Stock

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$14.699

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$13.229

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146

$14.699

$13.229

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UNI Independent Distributors

Spain . 5,876 parts In-Stock

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Corphita

USA . 496 parts In-Stock

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Assy Fe

Spain . 9 parts In-Stock

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Overview

Elevate your designs with the BLW91 from NXP Semiconductors, a top-tier RF Power Bipolar Junction Transistor known for its exceptional quality and reliability. With a robust ceramic and metal-sealed package, the BLW91 excels in amplifier applications, delivering impressive power gain and maintaining high performance even in ultra-high frequency bands. Trust NXP’s expertise to enhance your projects, ensuring efficiency and durability for optimal results in communication and industrial systems.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material offers excellent thermal stability and reliability, making it suitable for demanding applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient operation in common amplifier setups, enhancing signal processing capabilities.

Configuration: SINGLE

A single transistor configuration simplifies circuit design and integration, ideal for various applications.

Transistor Application: AMPLIFIER

Optimized for amplification, this transistor provides high performance in audio and RF applications.

Minimum Power Gain (Gp): 9 dB

A minimum power gain of 9 dB ensures sufficient amplification for a wide range of signals.

Package Shape: ROUND

The round package shape allows for efficient mounting and thermal management in compact designs.

Terminal Form: FLAT

Flat terminals enable easy soldering and enhance the product's integration into various circuit designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capability to operate in the ultra-high frequency band enhances performance in high-speed communications and RF applications.

No. of Terminals: 4

Four terminals provide versatile connectivity options, facilitating complex circuit configurations.

Package Style (Meter): POST/STUD MOUNT

Post/stud mounting simplifies installation and provides robust mechanical support for the device.

Maximum Power Dissipation Ambient: 30 W

Ability to dissipate up to 30 W ensures reliable performance without overheating, suitable for high-power applications.

Minimum DC Current Gain (hFE): 10

A minimum hFE of 10 indicates good efficiency in current amplification, crucial for effective signal processing.

Maximum Operating Temperature: 200 °C

High operating temperature rating allows for use in harsh environments, ensuring durability and longevity of operation.

Maximum Collector-Emitter Voltage: 30 V

A collector-emitter voltage of 30 V enables compatibility with various power levels in circuit designs.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency, making this product a robust choice for many applications.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows for significant load handling capabilities in diverse applications.

Terminal Position: RADIAL

Radial terminal positioning facilitates easier layout in printed circuit boards and enhances connectivity.

Case Connection: ISOLATED

Isolated case connection reduces the risk of short circuits, enhancing safety in electronic designs.

Nominal Transition Frequency (fT): 1000 MHz

A transition frequency of 1000 MHz supports high-speed operation, making it an excellent choice for RF applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW91 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Minimum Power Gain (Gp):

9 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW91 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-594-7987, 5961015947987

NIIN

015947987

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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