Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
BLW91 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 30 W, operates up to 1 GHz, and supports a collector current of 1.5 A. Its robust ceramic-metal sealed package ensures reliability in ultra-high frequency environments.
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Corphita
Assy Fe
This material offers excellent thermal stability and reliability, making it suitable for demanding applications.
The NPN configuration allows for efficient operation in common amplifier setups, enhancing signal processing capabilities.
A single transistor configuration simplifies circuit design and integration, ideal for various applications.
Optimized for amplification, this transistor provides high performance in audio and RF applications.
A minimum power gain of 9 dB ensures sufficient amplification for a wide range of signals.
The round package shape allows for efficient mounting and thermal management in compact designs.
Flat terminals enable easy soldering and enhance the product's integration into various circuit designs.
Capability to operate in the ultra-high frequency band enhances performance in high-speed communications and RF applications.
Four terminals provide versatile connectivity options, facilitating complex circuit configurations.
Post/stud mounting simplifies installation and provides robust mechanical support for the device.
Ability to dissipate up to 30 W ensures reliable performance without overheating, suitable for high-power applications.
A minimum hFE of 10 indicates good efficiency in current amplification, crucial for effective signal processing.
High operating temperature rating allows for use in harsh environments, ensuring durability and longevity of operation.
A collector-emitter voltage of 30 V enables compatibility with various power levels in circuit designs.
Silicon transistors are known for their reliability and efficiency, making this product a robust choice for many applications.
A maximum collector current of 1.5 A allows for significant load handling capabilities in diverse applications.
Radial terminal positioning facilitates easier layout in printed circuit boards and enhances connectivity.
Isolated case connection reduces the risk of short circuits, enhancing safety in electronic designs.
A transition frequency of 1000 MHz supports high-speed operation, making it an excellent choice for RF applications.
RF Power Bipolar Junction Transistors (BJT) BLW91 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BLW91 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NSN
5961-01-594-7987, 5961015947987
NIIN
015947987
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
1N4148WS
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
1N4148WT
Good-ark Electronics
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Shenzhen Yixinsemi Electronics
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
BSS138PS,115
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
BLV103
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Maximum Collector Current (IC): 1.25 A; Package Shape: RECTANGULAR;
BFQ254/1
PNP; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRPM-F4; Package Shape: ROUND; No. of Terminals: 4;
BFQ291
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
PTB42003X
PTB42003X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 14W, operates in the C band, and supports surface mount with a flat terminal design. Ideal for high-frequency amplification in compact systems.
BLV948
BLV948 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 320W, operates in the UHF band, and offers a min power gain of 6.5 dB. Its robust ceramic-metal package ensures reliability in demanding environments.
SD1727
STMicroelectronics
SD1727 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 233W, max collector-emitter voltage of 55V, and operates up to 200 °C.
BLX69A
BLX69A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3.5 A, operates up to 200 °C, and achieves a min power gain of 4 dB in the ultra-high frequency band. Its round, flat package ensures efficient thermal management.
BDP950E6327HTSA1
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;
PTB20082
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;
RF3L05150CB4
RF Power Bipolar Transistors;
BLV194
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRF392
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 16 A; Transistor Element Material: SILICON;
SD1460
SD1460 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 160W power dissipation. Ideal for amplifier applications in the VHF band, it offers a max operating temperature of 200 °C and a collector current of 16A.
AT-64020
Broadcom
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;
2SC4001-AZ
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): .1 A;
2N3866
Microchip Technology
2N3866 by Microchip Technology is a NPN RF BJT with 1V VCEsat, 10dB Gp, and 800MHz fT. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its 30V VCEO and 0.4A IC capabilities. The transistor's SILICON material and 3-terminal CYLINDRICAL package make it suitable for high-frequency amplification needs.
MRF454
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel;
2SC2318
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2700 MHz; Maximum Collector Current (IC): .35 A; Terminal Position: BOTTOM;
LUE2009S
LUE2009S by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 3.5W, operates up to 200 °C, and offers a min power gain of 8.5 dB in the S band. Its ceramic-metal sealed package ensures durability in demanding environments.
LAE4001R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRMW-F4;
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BLW96
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 245 MHz; Maximum Power Dissipation (Abs): 340 W; Maximum Collector Current (IC): 12 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 340 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-CRFM-F4;
New Jersey Semiconductor Products
NPN; Nominal Transition Frequency (fT): 245 MHz; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 55 V; No. of Elements: 1;
BLW90
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;
BLW95
RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; No. of Elements: 1;
BLW98
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 21.5 W; Maximum Collector Current (IC): 2 A;
BLW99
RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: FLAT; Terminal Position: RADIAL;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.5 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 4;
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