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AM0608-450

STMicroelectronics

AM0608-450 by STMicroelectronics

STMicroelectronics' AM0608-450 is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 6.9 dB, max power dissipation of 1500 W, and operates in the ultra-high frequency band. The transistor has a max collector current of 32 A and can withstand temperatures up to 250 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 2,577 parts In-Stock

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2,577

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Digiode

USA . 1,092 parts In-Stock

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1,092

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Vyrian

USA . 166 parts In-Stock

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166

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IDEA Electronic Components Group

UK . 546 parts In-Stock

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$1.300

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$1.170

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546

$1.300

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MKK Technologies

India . 708 parts In-Stock

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$2.444

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708

$2.444

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DigiPath Technology Company

USA . 708 parts In-Stock

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$2.444

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708

$2.444

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Native Components

USA . 838 parts In-Stock

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$117.307

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$112.614

838

$117.307

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$112.614

Northwest PG Solutions

USA . 1,290 parts In-Stock

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$129.037

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$129.037

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Corphita

USA . 4,740 parts In-Stock

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Parana Technologies

USA . 816 parts In-Stock

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$1.554

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Overview

Elevate your RF power amplifier designs with the AM0608-450 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. This NPN bipolar junction transistor offers exceptional power gain, making it ideal for ultra-high frequency applications. With a maximum power dissipation of 1500W and a maximum collector current of 32A, this transistor delivers unmatched performance and efficiency. Trust STMicroelectronics to provide you with the cutting-edge technology you need to take your amplifier designs to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures high durability and reliability, making this product suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into existing circuit designs, providing compatibility and flexibility.

Configuration: SINGLE

The single configuration simplifies the setup and use of this transistor, making it user-friendly and efficient.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high performance and reliability in amplifying signals.

Surface Mount: YES

The ability to be surface mounted facilitates easy and convenient installation, saving time and effort during assembly.

Minimum Power Gain (Gp): 6.9 dB

With a minimum power gain of 6.9 dB, this transistor offers enhanced signal amplification capabilities, ensuring optimal performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into circuit layouts, maximizing functionality.

Terminal Form: FLAT

The flat terminal form simplifies connections and ensures secure mounting, enhancing the overall reliability of the product.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high frequency band, this transistor is ideal for high-frequency applications, providing excellent signal processing capabilities.

No. of Terminals: 2

Having 2 terminals simplifies the wiring and connection process, making this transistor easy to use and integrate into electronic systems.

Maximum Power Dissipation (Abs): 1500 W

With a maximum power dissipation of 1500 W, this transistor can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure and stable mounting, ensuring reliable performance in various operating conditions.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor offers consistent and efficient amplification of input signals, enhancing overall performance.

Maximum Operating Temperature: 250 °C

Operating at a maximum temperature of 250 °C, this transistor can withstand high temperatures, making it suitable for harsh environments.

Transistor Element Material: SILICON

Constructed with silicon material, this transistor offers high reliability, low power consumption, and stable performance, ensuring long-term usability.

Maximum Collector Current (IC): 32 A

With a maximum collector current of 32 A, this transistor can handle high current loads, making it suitable for applications requiring high current capability.

Terminal Position: DUAL

Featuring dual terminal positions, this transistor offers flexibility in wiring and connection options, allowing for versatile use in different circuit configurations.

Case Connection: BASE

The base case connection provides a stable and secure mounting option, ensuring reliable performance and durability in various operating conditions.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM0608-450 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.9 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM0608-450 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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