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BLW32

NXP Semiconductors

BLW32 by NXP Semiconductors

The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.

Median Price

$47.720

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$46.150

100+ parts

$34.620

1k+ parts

$30.000

10k+ parts

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5

$46.150

$34.620

$30.000

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Nova Conductors

Japan . 100 parts In-Stock

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$49.290

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$49.290

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VNN

France . 6,346 parts In-Stock

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Anansix

USA . 2,813 parts In-Stock

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Digiode

USA . 1,822 parts In-Stock

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Vyrian

USA . 1,259 parts In-Stock

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Holdelec - ElecDif-Pro

France . 10 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

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Donberg Electronics Ltd

Ireland . 1 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 494 parts In-Stock

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$18.268

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494

$18.268

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One Stop Electronics

USA . 364 parts In-Stock

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$27.050

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364

$27.050

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Continental Prestige Electronics

USA . 1,667 parts In-Stock

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$49.290

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$48.304

1,667

$49.290

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$48.304

Netroflash

USA . 500 parts In-Stock

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$49.290

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$46.826

10k+ parts

$45.840

500

$49.290

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$46.826

$45.840

A-Z Elektronik GmbH

Germany . 6,318 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,212 parts In-Stock

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Argo Parts USA

USA . 3,347 parts In-Stock

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Corphita

USA . 2,234 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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UNI Independent Distributors

Spain . 945 parts In-Stock

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Kepictronics

USA . 625 parts In-Stock

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Glotronic Ltd.

UK . 43 parts In-Stock

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Overview

Experience unparalleled performance with the BLW32 by NXP Semiconductors, a leading manufacturer in the industry. This RF Power BJT offers exceptional power gain and operates in the ultra-high frequency band, making it ideal for amplifier applications. With a rugged ceramic and metal-sealed package, this transistor ensures reliability in any environment. Trust NXP Semiconductors to deliver top-quality products that meet your needs for efficiency and performance. Choose the BLW32 for superior results in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal conductivity and reliability, ensuring stable performance over time.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this product suitable for amplifier circuits.

Minimum Power Gain (Gp): 11 dB

Offers high power gain, enhancing the amplification capability of the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, enabling high-speed signal amplification.

Maximum Power Dissipation (Abs): 10.8 W

Can handle high power dissipation, making it suitable for applications requiring efficient power management.

Maximum Collector-Emitter Voltage: 30 V

With a high collector-emitter voltage rating, it is compatible with a wide range of voltage levels in circuits.

Nominal Transition Frequency (fT): 3500 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it ideal for RF applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW32 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

10.8 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW32 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-14-384-2415, 5961143842415

NIIN

143842415

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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