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AM82731-012

STMicroelectronics

AM82731-012 by STMicroelectronics

STMicroelectronics' AM82731-012 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 6 dB, can handle up to 50 W power dissipation, and operates in the S band frequency range. The transistor is surface-mountable and has a max collector current of 2 A, making it suitable for high-frequency switching applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,777 parts In-Stock

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2,777

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Digiode

USA . 2,070 parts In-Stock

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2,070

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Vyrian

USA . 170 parts In-Stock

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170

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,034 parts In-Stock

1+ parts

$1.340

100+ parts

-

1k+ parts

$1.206

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2,034

$1.340

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$1.206

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MKK Technologies

India . 1,099 parts In-Stock

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$2.519

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1,099

$2.519

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DigiPath Technology Company

USA . 1,099 parts In-Stock

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$2.519

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1,099

$2.519

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Native Components

USA . 458 parts In-Stock

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$5.521

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458

$5.521

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Corphita

USA . 3,705 parts In-Stock

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3,705

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Northwest PG Solutions

USA . 2,127 parts In-Stock

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$5.411

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2,127

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$5.411

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Parana Technologies

USA . 559 parts In-Stock

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$1.602

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559

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$1.602

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Overview

Experience superior performance with the AM82731-012 RF Power BJT from STMicroelectronics. Crafted with precision and expertise, this transistor offers unparalleled reliability and efficiency for switching applications in the S Band frequency range. Its ceramic, metal-sealed cofired package ensures durability and optimal thermal management, while its NPN configuration delivers seamless operation. Upgrade your systems with the AM82731-012 and elevate your performance to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and thermal conductivity, ensuring reliable performance in high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easy to implement and provide stable performance in various circuit designs.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance and low power consumption.

Surface Mount: YES

Surface mount technology allows for easy and compact integration into circuit boards, saving space and simplifying assembly.

Minimum Power Gain (Gp): 6 dB

A minimum power gain of 6 dB ensures reliable amplification and signal integrity in demanding applications.

Package Shape: RECTANGULAR

Rectangular packages are easy to handle and mount, providing convenience during assembly and maintenance.

Terminal Form: FLAT

Flat terminals ensure secure connections and efficient heat dissipation, enhancing the overall reliability of the transistor.

Highest Frequency Band: S BAND

Designed for high-frequency operation in the S band, making it suitable for applications where fast signal processing is required.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit design and reduces complexity, making the transistor easy to use in various applications.

Maximum Power Dissipation (Abs): 50 W

With a maximum power dissipation of 50 W, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount packages provide robust mechanical support and easy installation, making them suitable for harsh environments and industrial settings.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and consistent amplification of signals, improving overall circuit performance.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high-temperature environments without compromising its performance.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance and reliability, making them ideal for a wide range of electronic applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle high current loads, ensuring stable and efficient operation in demanding conditions.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit design and allow for easy connection to external components, enhancing the transistor's versatility.

Case Connection: BASE

Base connection enhances the stability of the transistor and ensures reliable performance in high-current and high-power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM82731-012 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM82731-012 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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