Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1492 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 318W and can handle a collector current of 25A. Ideal for amplifier applications, this transistor features a max collector-emitter voltage of 30V and operates at temperatures up to 200 °C.
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$1.772
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$1.126
Corphita
The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ensuring long-lasting performance.
NPN polarity enables easy integration into amplifier circuits, making it suitable for various applications.
Single configuration simplifies circuit design and assembly, making the transistor easy to use for amplifier applications.
Designed specifically for amplifier applications, ensuring high performance and reliability in amplification tasks.
Surface mount capability allows for easy and compact installation on circuit boards, saving space and facilitating assembly.
Rectangular package shape provides stability and ease of mounting, ensuring secure placement on the circuit board.
Flat terminal form simplifies soldering and connection, facilitating easy integration into amplifier circuits.
Designed for ultra-high-frequency applications, providing high-speed performance and efficiency in signal amplification.
Four terminals offer flexibility in circuit connections and enable versatile usage in amplifier applications.
High maximum power dissipation allows the transistor to handle high power levels, ensuring efficient amplification performance.
Flange mount package style provides secure mounting and heat dissipation, enhancing the transistor's reliability during operation.
A minimum DC current gain of 15 ensures effective signal amplification and reliable performance in amplifier circuits.
High maximum operating temperature of 200 °C allows the transistor to withstand elevated temperatures during operation, ensuring stable performance.
Low collector-base capacitance of 100 pF minimizes signal distortion and ensures high-frequency response in amplifier applications.
Maximum collector-emitter voltage of 30 V allows the transistor to handle voltage fluctuations, ensuring reliable operation in amplifier circuits.
Silicon transistor element material offers high performance, reliability, and efficiency in signal amplification applications.
High maximum collector current of 25 A allows the transistor to handle large current loads, ensuring efficient signal amplification.
Dual terminal position provides flexibility in circuit design and connection options, enhancing the transistor's usability in amplifier applications.
Emitter case connection ensures proper grounding and signal transmission, enhancing the amplifier circuit's performance and stability.
RF Power Bipolar Junction Transistors (BJT) SD1492 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
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Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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SD1492 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
2N7002
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS123LT1G
Onsemi
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Daco Semiconductor
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
MC7805CTG
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Panjit International
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
Vishay Sprague
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
2N5642
Thomson-csf Semiconductors
NPN; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 35 V; Transistor Element Material: SILICON;
BLV58
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 87 W; Maximum Collector Current (IC): 4 A; Minimum Power Gain (Gp): 10 dB;
AM83135-010
STMicroelectronics AM83135-010 is a NPN RF BJT transistor with 5 dB min power gain, suitable for S Band applications. It has a max power dissipation of 50 W and can handle up to 2 A collector current. The package is ceramic-metal sealed co-fired with flange mount style.
BLW34
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 31 W; Maximum Collector Current (IC): 2.25 A;
MZ0921B50Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND; Maximum Operating Temperature: 200 Cel;
SD1542
SD1542 by STMicroelectronics is a NPN RF BJT with 1300W power dissipation, suitable for L Band applications. Featuring a max collector current of 40A and operating temperature of 175 °C, it is designed for high-power RF amplification in various systems. This single configuration transistor has a ceramic-metal-sealed co-fired package ideal for surface mount installations.
MRF658
MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.
RZ1214B35U
NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
SD8250
STMicroelectronics' SD8250 is a NPN RF BJT transistor with 575W power dissipation, ideal for L Band applications. Featuring single configuration, it has a max collector current of 20A and operates at up to 250 °C. Suitable for switching purposes, this transistor is surface mountable with a ceramic-metal package body.
PTB23006U
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .75 A; Transistor Application: AMPLIFIER;
RO2731B20W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.7 A; Maximum Operating Temperature: 200 Cel;
BDP948H6433XTMA1
Infineon Technologies
Infineon's BDP948H6433XTMA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
LXE15450XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;
BLV91
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
SD1733
SD1733 by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 3.25A IC, and 127W Ptot. Ideal for amplifier applications in the VHF band due to its high frequency capabilities and silicon element material. Package style is post/stud mount with 4 terminals in a round shape.
BLS3135-50TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;
BLX94C
BLX94C by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates up to 750MHz, and supports a collector current of 2.5A. Ideal for ultra-high frequency circuits in demanding environments.
BLW33
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3400 MHz; Maximum Power Dissipation (Abs): 19.3 W; Maximum Collector Current (IC): 1.25 A;
AM1214-100
STMicroelectronics' AM1214-100 is a NPN RF BJT transistor with 6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 270 W and can handle up to 13 A collector current. Suitable for switching purposes, this transistor is surface mountable and operates at temperatures up to 250 °C.
3005
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0;
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SD1457
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 108 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 10 A;
SD1437
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19.4 W; Maximum Collector Current (IC): .45 A; No. of Terminals: 4;
SD1414-12
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 9 A; JESD-30 Code: R-PDFM-F6;
SD1456
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A; Maximum Collector-Emitter Voltage: 33 V;
SD1446
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 18 V; JESD-30 Code: O-PRFM-F4;
SD1433
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 2.5 A; Transistor Element Material: SILICON;
SD1458
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
SD1407
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 20 A; No. of Terminals: 4;
SD1439
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.75 W; Maximum Collector Current (IC): .22 A; JESD-30 Code: O-PRPM-F4;
SD1423
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;
SD1455
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A; JESD-30 Code: O-PRPM-F4;
SD1448
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.8 W; Maximum Collector Current (IC): .85 A; Package Shape: ROUND;
SD1425
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 20;
SD1456(TCC3100)
NPN; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
SD1414
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 9 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SD1434
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
SD1405
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; JESD-30 Code: O-PRFM-F4; Qualification: Not Qualified;
SD1411
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Minimum DC Current Gain (hFE): 15;
SD1424
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 20; Maximum Collector-Emitter Voltage: 25 V;
SD1449
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19.4 W; Maximum Collector Current (IC): .44 A; Transistor Element Material: SILICON;
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