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SD1457

STMicroelectronics

SD1457 by STMicroelectronics

SD1457 by STMicroelectronics is a NPN RF Power BJT with 4 terminals and 100W power dissipation. It operates in the VHF band, has a max. collector-emitter voltage of 30V, and a transition frequency of 108MHz. Ideal for amplifier applications due to its high power handling capabilities and very high operating temperature of 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,436 parts In-Stock

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3,436

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Vyrian

USA . 3,095 parts In-Stock

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3,095

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Anansix

USA . 119 parts In-Stock

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119

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 796 parts In-Stock

1+ parts

$1.145

100+ parts

-

1k+ parts

$1.031

10k+ parts

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796

$1.145

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$1.031

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MKK Technologies

India . 2,026 parts In-Stock

1+ parts

$2.154

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2,026

$2.154

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DigiPath Technology Company

USA . 2,026 parts In-Stock

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$2.154

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2,026

$2.154

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Parana Technologies

USA . 2,296 parts In-Stock

1+ parts

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$1.370

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2,296

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$1.370

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Corphita

USA . 1,471 parts In-Stock

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1,471

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Perfect Parts

USA . 4 parts In-Stock

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4

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Cyclops Electronics Ltd (Excess)

UK . 2 parts In-Stock

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2

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Overview

Elevate your RF amplifier designs with the SD1457 by STMicroelectronics. Crafted with precision and expertise, this NPN RF Power BJT offers unparalleled performance in the Very High Frequency Band, making it ideal for a wide range of applications. From high power dissipation capabilities to superior thermal management, this transistor is designed to deliver exceptional value and benefits to customers seeking top-notch quality and reliability. Trust STMicroelectronics to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and insulation properties, enhancing the overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making them suitable for various applications.

Configuration: SINGLE

Simplifies circuit design and reduces the chances of errors in the layout, making it easier to utilize in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: ROUND

Facilitates easy and secure mounting in circular configurations, suitable for various amplifier setups.

Maximum Power Dissipation (Abs): 100 W

Can handle high power levels without the risk of overheating or damage, making it ideal for high-performance amplifier systems.

Maximum Collector-Emitter Voltage: 30 V

Can withstand relatively high voltage levels across the collector and emitter, ensuring reliable operation in amplifier circuits.

Maximum Collector Current (IC): 10 A

Capable of handling high collector current levels, making it suitable for applications where high output power is required.

Nominal Transition Frequency (fT): 108 MHz

High transition frequency enables fast response and switching times, crucial for amplifier applications requiring high-speed operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1457 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

85 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SD1457 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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