Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 21 A; Transistor Application: AMPLIFIER;
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Perfect Parts
RF Power Bipolar Junction Transistors (BJT) MX0912B351Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Minimum Power Gain (Gp):
Qualification:
Sub-Category:
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Transistor Element Material:
MX0912B351Y Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-394-5756, 5961013945756, 5961-01-394-0071, 5961013940071
NIIN
013945756, 013940071
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Infinex
1N4148
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
MC7805CTG
Onsemi
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
EU2B-YS3103F
Idec
ROTARY SWITCH;
LM358N
Freescale Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
AT90CAN128-16AU
Microchip Technology
AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.
MMBF170LT1G
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
BLV934
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
AM81214-030
STMicroelectronics AM81214-030 is an NPN BJT transistor with 7.2 dB min power gain, ideal for L Band applications. It has a max power dissipation of 63 W and can handle a collector current of 2.75 A, suitable for switching operations in high-frequency circuits. The package is ceramic-metal-sealed co-fired with a flange mount style, making it versatile for various RF power applications.
ISL73096EHVX
Renesas Electronics
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; JESD-609 Code: e4;
RO2731B50W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 6.5 A; No. of Terminals: 2;
BDP950
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;
SD1541-01
STMicroelectronics' SD1541-01 is a NPN RF BJT with 22A IC, 1460W Pdiss, and L Band freq. Ideal for high-power applications in the RF domain due to its ceramic-metal package and flat terminal form. Suitable for use in communication systems requiring high-frequency amplification.
BLV57
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 2 A;
BLS2731-10
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
SD1898
SD1898 by STMicroelectronics is a NPN RF BJT transistor with 87.5W power dissipation, suitable for L Band applications. It has a max collector current of 7.8A and operates at up to 200 °C temperature, making it ideal for amplifier circuits in high-frequency settings. The package style is flange mount with a square shape and flat terminals, offering easy surface-mount integration.
2SC2652
Toshiba
2SC2652 by Toshiba is a NPN RF Power BJT with 13 dB min power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 300 W, a collector-emitter voltage of 55 V, and a transition frequency of 100 MHz.
MRF422
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL; Highest Frequency Band: HIGH FREQUENCY BAND;
MZ0912B100Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Terminal Form: FLAT; Maximum Operating Temperature: 200 Cel;
BLV98CE
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F6;
MSC81450M
MSC81450M by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 910 W, operates at up to 200 °C, and supports L band frequencies. Its flat terminal design allows for efficient surface mounting.
SD8250
STMicroelectronics' SD8250 is a NPN RF BJT transistor with 575W power dissipation, ideal for L Band applications. Featuring single configuration, it has a max collector current of 20A and operates at up to 250 °C. Suitable for switching purposes, this transistor is surface mountable with a ceramic-metal package body.
SD1731-14
SD1731-14 by STMicroelectronics is a NPN RF BJT with 257W power dissipation, 55V max collector-emitter voltage, and 20A max collector current. It is used in high-frequency band applications due to its single configuration and silicon transistor element material.
2SC2101
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 4; Maximum Collector-Base Capacitance: 25 pF;
AM1011-400
STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
SD1650
SD1650 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 175W and can handle a collector-emitter voltage of 28V. Ideal for amplifier applications due to its high-frequency capabilities and power handling capacity.
BLW90
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;
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MX0912B100Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 20 V;
MX0912B250Y
NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR; No. of Terminals: 2;
MX0912B251Y
NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.
MX0912B251Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F2; Package Style (Meter): FLANGE MOUNT;
MX0912B251YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: BASE; No. of Elements: 1;
MX0912B350Y
NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 20 V;
MX0912B351Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; No. of Terminals: 2; Terminal Position: DUAL;
MX0912B351YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;
MX0912B351Y
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): FLANGE MOUNT;
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